Ultrafast carrier dynamics in InN epilayers
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Vertical profiling of ultrafast carrier dynamics in partially strain relaxed and strained InGaN grown on GaN/sapphire template of different In composition
2023, Applied Surface ScienceCitation Excerpt :Both of the carrier lifetimes decreased with elevation of In composition due to deterioration of crystal quality. In the bi-exponential decay curve obtained from the nitride semiconductor, the fast decay lifetime is generally due to the hot carrier cooling [32]. However, the decay lifetime due to the hot carrier cooling is in the ps range [33] contrary to the measurement results in the ns range.
Molecular beam epitaxy of InN nanowires on Si
2015, Journal of Crystal GrowthCitation Excerpt :III-N semiconductors are useful for solid state lighting [1], high power electronics [2], ultraviolet emitters [3,4], solar energy conversion [5,6], and sensors [7]. Within the III-N family, InN stands out due to its narrow bandgap (0.65 eV) [8,9], very high electron mobility [10–16] and large saturation velocity, making it a potential candidate for high-speed and high frequency electronic [17,18], optoelectronic [19], and energy harvesting applications [20,21]. The synthesis of planar InN films is hampered by the lack of a lattice-matched substrate and the thermal instability of InN [22], leading to highly defective films.
Optical and structural studies of InN/GaN dots with varying GaN cap thickness
2013, Journal of Crystal GrowthCitation Excerpt :The PL spectrum of the un-capped InN dots shows peak energy at 0.807 eV, with a FWHM of 104 meV. The emission energy of the un-capped InN dots is higher than the reported bandgap energy of 0.69 eV [13], and indicates a strong Burstein–Moss (BM) effect due to the presence of a high electron concentration in the InN dots. Cimalla et al. [14] reported that the high surface electron concentration generated by the high surface density of states was due to the high ratio of surface area to the volume of dots.
Growth and optical properties of high-density InN nanodots
2010, Journal of Crystal GrowthNon-linear properties of nitride-based nanostructures for optically controlling the speed of light at 1.5 μm
2009, Microelectronics Journal