Large negative Goos–Hanchen shift at metal surfaces

doi:10.1016/j.optcom.2007.04.019

Optics Communications

Volume 276, Issue 2, 15 August 2007, Pages 206-208

https://doi.org/10.1016/j.optcom.2007.04.019 Get rights and content

Abstract

It has been previously established that for p-polarized light incident onto a semi-infinite absorbing medium, large negative Goos–Hanchen (GH) shifts can be expected in the case of weak absorption at incidence close to the Brewster angle. The effect has been demonstrated for certain semiconducting media at optical frequencies. Here we point out that similar phenomenon can take place for strongly reflecting and attenuating medium such as metal at IR frequencies, with large incident angles close to grazing incidence. Moreover, unlike the previously-studied case with semiconductors, the Brewster angle in the present case with metals plays an insignificant role in the possible hindrance of the observation of such large negative shifts.

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Acknowledgements

PTL acknowledges a research grant from Intel Corporation. This research was also partially supported by Center of Nanostorage Research, National Taiwan University, under grant number MOEA#95-EC-17-A-08-S1-0006 and the National Science Council of ROC under grant numbers NSC 95-2112-M-019-002 and NSC 95-2120-M-019-002. We also like to acknowledge the support from Center for Marine Bioscience and Biotechnology, National Taiwan Ocean University under grant numbers NTOU-AF94-05-04-01-01 and

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In this work, we have presented the deep insight of Goos–Hänchen shift depending upon the temperature when a plane incident electromagnetic beam of light enters from a rare to a denser medium, keeping conditions of total internal reflection intact. A simple well known Drude’s model has been used for the purpose of thermal analysis of this shift. Through this model, the temperature-dependent permittivity of absorbing or complex medium has been found through the temperature-dependent plasma and damping wavelengths. Both transverse electric and magnetic incident electromagnetic fields have been considered in this regard. On an air–metal interface, firstly, Goos–Hänchen shift has been found when a temperature-independent dielectric function of a complex medium has been considered, and secondly, by analyzing the temperature-dependent dielectric function in the simplest way by using the stationary-phase method. This study is useful to understand the behavior of Goos–Hänchen shift around the temperature-dependency of the medium and how the angle of incidence impacts in this scenario.
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Citation Excerpt :
This is called the Goos–Hänchen (GH) effect and it arises from the angular dispersion phase delay of the reflected beam [21]. Various materials and structures, such as, the dielectric plates, metals, metamaterials and photonic crystals, have been used to modify the GH effects and their wavelength range covers from visible to terahertz [22–34]. The characteristics of the GH shift lead to a wide range of applications, such as, light sensing and wavelength division demultiplexers [35,36].
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Goos–Hänchen-like shifts of anisotropic Dirac fermions in graphene
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The Goos–Hänchen-like (GHL) shift of Dirac fermions passing through a potential barrier for an anisotropic honeycomb lattice is studied. The analytical solution of the GHL shift and numerical results of the lateral shifts for three values of the merging parameter ( $δ$ ) are presented. Then, the effects of the incidence angle and $δ$ on the lateral shifts of anisotropic Dirac electrons are considered. Moreover, we investigate the influence of the uniaxial strain on a critical angle and see that it changes as a function of energy. We also demonstrate that by changing some parameters, more specifically merging parameter, one can obtain the different shifts for graphene under strong uniaxial strain.
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Because of their potential applications in the fields of biomedicine, chemical sensors, detectors and optical measurements [2–4], a lot of theoretical and experimental works have been focused on the research of the GH shift in these years. However, the GH shift is small in general, which hinders its further applications [5–8]. Researchers have made great effort to enlarge the GH shift by using multilayer thin film stacked structures, prism-waveguide coupling systems as well as grating structures [9–15].
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Silicene has a rich phase diagram, which is due to the strong spin–orbit coupling induced by the buckled structure. In this work, the Goos-Hänchen (GH) shift of silicene in different phases is investigated. By employing the Kubo model of conductivity of silicene and angular spectrum analysis, the analytical expression of GH shift is obtained. Based on the analytical results, a series of numerical simulations are carried out. The results demonstrate that one can acquire a large negative spatial GH shift at the pseudo-Brewster angle when the silicene is in metal phases. When the silicene is in nonmetallic states, the spatial GH shift become positive. For the angular GH shift, no matter what phase the silicene is in, it varies very rapidly and even changes the sign near the pseudo-Brewster angle. This allow us to manipulate the GH effect by controlling the applied external circularly polarized light electric field or magnetic field. We believe that these results are helpful for developing novel optoelectronic devices that base on the GH effect of silicene.

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Large negative Goos–Hanchen shift at metal surfaces

Abstract

Section snippets

Acknowledgements

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Optik

Optik

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Phys. Rev. A

Opt. Spectrosc.

Opt. Spectrosc.

Opt. Lett.

J. Opt. Soc. Am.

Opt. Lett.

Opt. Lett.