Elsevier

Organic Electronics

Volume 15, Issue 11, November 2014, Pages 2912-2921
Organic Electronics

Electronic structure of fullerene derivatives in organic photovoltaics

https://doi.org/10.1016/j.orgel.2014.08.013Get rights and content

Highlights

  • Electronic structure of fullerene derivatives for OPVs was systematically studied.

  • The correlation between the molecular structure and the electronic structure is discussed.

  • The side chains have great influences on ionization energy and affinity of the compounds.

Abstract

The electronic structures of the fullerene derivatives [6,6]-phenyl-C61-butyric acid methyl ester (PCBM), [6,6]-diphenyl C62 bis (butyric acid methyl ester) (bisPCBM), C70, [6,6]-phenyl-C71-butyric acid methyl ester (PC70BM), [6,6]-phenyl-C61-butyric acid butyl ester (PCBB), [6,6]-phenyl-C61-butyric acid octyl ester (PCBO), [6,6]-thienyl-C61-butyric acid methyl ester (TCBM), and indene-C60 bisadduct (ICBA), which are frequently used as n-type materials in organic photovoltaics, were studied by ultraviolet photoelectron spectroscopy and inverse photoemission spectroscopy. We also performed molecular orbital calculation based on density functional theory to understand the experimental results. The electronic structures near the energy gap of the compounds were found to be governed predominately by the fullerene backbone. The side chains also affected the electronic structures of the compounds. The ionization energy and electron affinity were strongly affected by the number of carbons and functional groups in the side chain.

Introduction

Organic photovoltaics (OPV), particularly OPV devices containing a polymer/fullerene-based bulk heterojunction (BHJ), have attracted much interest because of their potential for low-cost, large-area, lightweight, and flexible devices with simple structures [1], [2], [3].

The fullerenes C60 and C70 and their derivatives bearing various functional group side chains have been used as n-type semiconductor materials in OPV devices with high-efficiency photoelectric conversion [4], [5], [6], [7], [8]. C60 and C70 are incompatible with solution processes because of their low solubility in common organic solvents. Soluble derivatives have been synthesized by adding functional groups to these fullerene backbones [9], [10], thus allowing OPV devices to be fabricated using solution processes such as spin-coating [11]. [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) is a well-known soluble derivative and has been frequently used as an acceptor in OPVs [4], [9]. Electronic structure of the fullerene derivatives has been investigated by some groups so far [12], [13], [14], [15], [16]. It has been reported that the side chains of PCBM and [6,6]-phenyl-C71-butyric acid methyl ester (PC70BM) affect the solubility and morphology of the film, and its electronic structure, which may improve device performance [14], [15], [16].

OPV performance, particularly optical absorption, carrier injection, and carrier transport, strongly depends on the electronic structure of the donor and acceptor molecules [17], [18]. The electronic structure around the Fermi level (EF), such as the highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO), plays an important role in determining the optical and transport properties [19]. For example, the correlation between the electronic structure of the donor or acceptor molecules and the open-circuit voltage (VOC) of the device, which is an energetic driving force for electron transfer from the donor to the acceptor, is still not fully understood. It is thought that VOC is related to the difference between the LUMO energy of the acceptor and the HOMO energy of the donor [20], [21]. Furthermore, the excitons, which are created after light absorption and migrate to the donor/acceptor interface, separate into electrons in the LUMO of the acceptor and holes in the HOMO of the donor. Thus, understanding the electronic structures of donor and acceptor molecules is important for elucidating the mechanisms by which OPV devices operate and for optimizing materials for high-performance devices.

Akaike et al. [14], [15] reported the effects of the side chain on the electronic structure of PCBM and [6,6]-diphenyl C62 bis(butyric acid methyl ester) (bisPCBM). They concluded that a subtle charge transfer from the side chain to the C60 backbone destabilizes the electronic states of the molecule. They also suggested that the effects of the side chain on the electronic structures of PCBM and bisPCBM may improve the performance of the OPV devices compared with devices containing C60 [22], [23]. Their work demonstrates that measures of OPV device performance, such as VOC, JSC, and fill-factor, can be discussed in terms of electronic structure. There are few other studies of the electronic structure of fullerene derivatives.

The purpose of this study is to systematically investigate the electronic structure of the fullerene derivatives used in OPVs. Fundamental information about the electronic structure of fullerene derivatives can be expected to guide the synthesis of new molecules optimized for high-performance OPVs. The electronic structures of the fullerene derivatives PCBM, bisPCBM, C70, PC70BM, [6,6]-phenyl-C61-butyric acid butyl ester (PCBB), [6,6]-phenyl-C61-butyric acid octyl ester (PCBO), [6,6]-thienyl-C61-butyric acid methyl ester (TCBM), indene-C60 monoadduct (ICMA), and indene-C60 bisadduct (ICBA) (Fig. 1) were examined by ultraviolet photoelectron spectroscopy (UPS) and inverse photoemission spectroscopy (IPES). To interpret the experimental results, molecular orbital (MO) calculations were performed.

The electronic structures of the fullerene derivatives strongly depended on structural features, including the type of backbone, number of side chains, side chain length, and functional groups. We investigated the effect of side chains by comparing C70 with PC70BM using the same method as Akaike et al. [14], [15] The dependence of the electronic structure on the fullerene backbone and the side chain length are discussed by comparing PCBM, PC70BM, PCBB, and PCBO. The difference in electronic structure caused by replacing a phenyl group with a thienyl group in the side chain is also investigated by comparing PCBM with TCBM. The effect of introducing a different type of side chain on the electronic structure was examined by investigating ICBA.

Section snippets

Experimental and theoretical procedures

PCBM (>99.9%), bisPCBM (mixture of isomers, 99.5%), C70 (99%), PC70BM (mixture of isomers, 99%), PCBB (>97%), PCBO (>99%), TCBM (>99%), and ICBA (99%) were purchased from Sigma–Aldrich and used as received.

Thin films of PCBM, bisPCBM, PC70BM, PCBB, PCBO, TCBM, and ICBA were spin-coated from chlorobenzene solution (0.4 wt%) in a glovebox filled with N2 at room temperature. The films were spin-coated onto indium tin oxide (ITO)-coated glass substrates at 1500 rpm for 30 s and transferred to a vacuum

Electronic structure of fullerene derivatives

Fig. 2 shows the UPS/IPES results for the films of the fullerene derivatives, PCBM, bisPCBM, C70, PC70BM, PCBB, PCBO, TCBM, and ICBA, deposited on ITO substrates. The films were obtained by spin coating, except for the C70 film, which was obtained by vacuum-deposition on the ITO substrate. The vacuum levels (Evac) were estimated for the films from the energy of the secondary electron cut-offs (cut-offs), indicated by the vertical bars in Fig. 2(a).

Fig. 2(b) shows the experimental UPS/IPES

Conclusion

The UPS and IPES results in this work show that the electronic structure around Eg of the fullerene derivatives is determined by the fullerene backbone. The electronic structure of PCBM, bisPCBM, PCBB, PCBO, and TCBM were similar, and the electronic structure around the HOMO–LUMO gap of PC70BM was similar to that of C70. Thus, for PC70BM the value of Eg was small, producing a wider absorption range in visible region compared with the C60 derivatives. This is consistent with the higher

Acknowledgements

This work was supported by a Grant-in-Aid for Scientific Research (Grant No. 24350013) from the Ministry of Education, Culture, Sports, Science and Technology of Japan.

References (29)

  • E.L. Ratcliff et al.

    Org. Electron.

    (2012)
  • K. Akaike et al.

    Chem. Phys.

    (2013)
  • A. Nogimura et al.

    Org. Electron.

    (2013)
  • K. Akaike et al.

    Org. Electron.

    (2013)
  • G. Yu et al.

    Science

    (1995)
  • G. Dennler et al.

    Adv. Mater.

    (2009)
  • C.J. Brabec et al.

    Adv. Mater.

    (2010)
  • S.E. Shaheen et al.

    Appl. Phys. Lett.

    (2001)
  • S.H. Park et al.

    Nat. Photonics

    (2009)
  • Z. He et al.

    Nat. Photonics

    (2012)
  • L. Dou et al.

    Nat. Photonics

    (2012)
  • X. Li et al.

    Adv. Mater.

    (2012)
  • J.C. Hummelen et al.

    J. Org. Chem.

    (1995)
  • M.M. Wienk et al.

    Angew. Chem. Int. Ed.

    (2003)
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