Elsevier

Physica B: Condensed Matter

Volume 405, Issue 1, 1 January 2010, Pages 386-389
Physica B: Condensed Matter

Influence of temperature on dielectric properties of Fe-doped CaCu3Ti4O12 ceramics

https://doi.org/10.1016/j.physb.2009.08.093Get rights and content

Abstract

CaCu3Ti4−xFexO12 (0≤x≤0.2) ceramics were fabricated by a solid-state reaction method, and the dielectric properties were studied. Dielectric measurement performed at room temperature shows that with Fe content increasing from 0 to 0.2, the dielectric constant (ε′) decreases from about 5×104 to 50 in the frequency range from 1 kHz to 1 MHz, while ε′ of all Fe-doped samples at high temperature re-increased to a high level of 105 below 10 kHz, characterized by dielectric temperature spectrum. Interestingly, two dielectric relaxations named as I and II are observed with the increasing of temperature. In order to catch the intrinsic relaxation mechanism, the IBLC model and modulus approach are adopted to clarify these fantastic dielectric properties.

Introduction

In recent years, CaCu3Ti4O12 (CCTO) ceramics have attracted considerable interests due to their high dielectric constant (>104) and good stability until 1 MHz [1], [2], [3]. The dielectric constant abruptly drops to about 100 below 100 K, accompanying neither any phase transitions nor detectable changes of long-range crystallographic structure. In order to understand this unique response, a variety of characteristics of CCTO have been studied [4], [5], [6]. It is now widely accepted that the high dielectric constant at room temperature is associated with the internal barrier layer capacitance (IBLC) effect [7], [8], or electrode/sample contact effects [9], but not with an intrinsic effect. However, two dielectric relaxations are observed in dielectric property spectra measurement, which indicates that there are still some unknown factors contributing to the giant dielectric constant in CCTO. Prakash et al. argued that the additional dielectric relaxation originated from the surface layers due to the inhomogeneous of oxygen on the surfaces and the interior of the sample [10]. Li et al. suggested that the two dielectric relaxations may be ascribed to two Maxwell–Wagner relaxations, which occurred at the interfacial layer of grain boundaries and domain boundaries [11]. Furthermore, two dielectric relaxations are also observed in single-crystalline CCTO [12]. It is well known that there are no grain boundaries in single-crystalline CCTO.

Obviously, there are many open questions concerning the origin of the dielectric properties of CCTO. Grubbs et al. reported that Fe iron doping could produce remarkably large changes in dielectric response of Fe-doped CCTO ceramics [13], and they devoted to the low-temperature properties. In this work, we substitute Ti4+ with Fe3+ and investigate the dielectric properties of CCTO ceramics in high temperature where we found new additional relaxation responses.

Section snippets

Experimental

CaCu3Ti4−xFexO12 (CCTFO, x=0, 0.01, 0.04, 0.12, and 0.2) ceramics were prepared by a solid-state reaction method. High purity CaCO3 (99.99%), CuO (99.9%), TiO2 (99.99%), and Fe2O3 (99.9%) powders were mixed and ball-milled in ethanol for 10 h. Powders were dried and calcined at 900 °C for 10 h in air, then ball-milled for another 6 h. The calcined powders were blended with approximately 5 wt% polyvinyl alcohol (PVA) to press into pellets by uniaxial pressing, and all specimens were sintered at 1100 

Results and discussion

All samples could be indexed to cubic perovskite structure according to the standard card ICDD (05–0566), and no secondary phase was found. The detailed analysis was included in our previous research [14].

The SEM surface images of CCTFO ceramics (x=0, 0.01, 0.04, and 0.2) sintered at 1100 °C for 12 h are shown in Fig. 1(a–d), respectively. It can be seen that average grain size increases with increasing Fe doping content. Fig. 1(a) shows a discontinuous grain growth for the pure sample. When x

Conclusions

In conclusion, the influence of temperature on the dielectric properties in CCTFO ceramics has been investigated. With the increase of Fe doping content, dielectric constant decreases rapidly from around 5×104 to 50 at room temperature. We prove that colossal dielectric constant is related to the electrical properties of grains and grain boundaries for CCTFO ceramics in the frequency range from 1 kHz to 1 MHz. When frequency is lower than 1 kHz, the high permittivity comes from the contributions

Acknowledgments

This work is partially supported by the National Basic Research Program of China (973) under Grant No. 2007CB310407 and the International S&T Cooperation Program of China under Grant No. 2006DFA53410 and 2007DFR10250.

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