Elsevier

Physica B: Condensed Matter

Volume 406, Issue 23, 1 December 2011, Pages 4423-4428
Physica B: Condensed Matter

Effects of external electric and magnetic fields on the linear and nonlinear intersubband optical properties of finite semi-parabolic quantum dots

https://doi.org/10.1016/j.physb.2011.08.105Get rights and content

Abstract

In this work, influences of external electric and magnetic fields on the optical rectification coefficient, the linear and the third-order nonlinear optical absorption coefficients as well as refractive index changes of finite semi-parabolic quantum dots are investigated. In this regard, energy eigenvalues and eigenfunctions of the system are calculated numerically, and optical properties are obtained using the compact density matrix approach. The results show that external electric and magnetic fields have a great influence on these optical quantities.

Introduction

With the immense technological progress in the field of nanoprocessing, it is possible to fabricate high precision semiconductor nanostructures with three-dimensional confinement of electrons, called quantum dots (QDs). The reduction in dimensionality, produced by confining electrons (or holes) to thin semiconductor layers, leads to drastic changes in their behaviors and dramatically affect their electronic structures and optical properties.

One of the most interesting properties of QDs is that the optical transitions between the size quantized levels (subbands) in the valence or conduction bands are feasible. Therefore, investigation of the linear and nonlinear optical properties of QDs has been widely made in the literature [1], [2], [3], [4], [5], [6], [7], [8], [9], [10], [11]. These studies demonstrate that quantum confinement of carriers in QDs has improved physical properties, as compared with semiconductor quantum wells and wires, for high-performance optoelectronic devices [12], [13].

Furthermore, external electric and magnetic fields have become an effective tool for studying the physical properties of low-dimensional systems, both from the theoretical and the practical point of views. Investigation of the effects of external electric and magnetic fields on the linear and nonlinear optical properties of semiconductor nanostructures have been reported in several papers [14], [15], [16], [17], [18], [19], [20], [21], [22], [23]. All of the studies mentioned above have shown that the linear and nonlinear optical properties sensitivity depend on the applied fields.

Recently, especial attention had been paid to a semi-parabolic confinement potential as an asymmetrical quantum system, which can be more pronounced when an electric field is applied to this quantum system too [24], [25], [26], [27], [28], [29], [30]. To our knowledge, in all of the investigations the dot is held at infinite parabolic potential and the emphasis is put upon the dependence of physical properties of the enclosed particles on the confinement frequency. It should be noted that the infinite potential wells are not physically feasible. The reason is that the maximum barrier height obtained in GaAs/AlxGa1−xAs system is 350 meV [31]. However, progress in computational physics with high accuracy permits us to investigate semi-parabolic finite potentials, which are important theoretically and experimentally. To this end, we consider a finite one-dimensional semi-parabolic quantum dot (SPQD), and investigate the effects of external electric and magnetic fields on the optical rectification coefficient (ORC), the linear and the third-order nonlinear intersubband optical absorption coefficients (ACs) and refractive index changes (RICs).

The paper is organized as follows: in Section 2, we describe the theoretical framework. Our numerical results and a brief summary are presented in 3 Results and discussion, 4 Conclusions, respectively.

Section snippets

Electronic states in SPQDs

In the effective mass approximation, the Hamiltonian of an electron confined in one-dimensional SPQDs, under the influence of external electric and magnetic fields, is given byH=22m(z)2z2+V(z)+e2B22m(z)c2z2eFz,where m(z) is the position dependent electron effective mass, c is the speed of light, F is the electric field strength, and B is the magnetic field applied perpendicular to the growth direction. As shown in Fig. 1, the confinement potential V(z) is given byV(z)=12m1ω02z2,0zL,V0

Results and discussion

In the following we will calculate the ORC, the linear and the third-order nonlinear ACs and RI changes of finite SPQDs under the influence of external electric and magnetic fields. We perform our calculations for a typical AlxGa1−xAs/GaAs/AlxGa1−xAs SPQD. The parameters used in our calculations are as follows [33]: m1=0.067m0, m2=(0.067+0.083x)m0 (where m0 is the free electron mass and x=0.4 is the aluminum concentration), σv=5.0×1022m3, nr=3.2, Γ0=1/T0 where T0=0.14ps, μ=4π×107Hm1, nr

Conclusions

In conclusion, we have presented the optical properties of a finite SPQD, using compact density matrix approach. Numerical calculations are performed to solve the Schrödinger equation in order to find energy eigenvalues and eigenfunctions of an electron confined in a finite SPQD, in the presence of external electric and magnetic fields. Results are employed to investigate the influence of external electric and magnetic fields on the ORC, optical ACs and RI changes of the system.

It is found that

Acknowledgements

This work is partially supported by the Shiraz University of Technology and Yasouj University.

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