Modal gain characteristics of GRIN-InGaAlAs/InP lasing nano-heterostructures

doi:10.1016/j.spmi.2013.05.019

Superlattices and Microstructures

Volume 61, September 2013, Pages 1-12

https://doi.org/10.1016/j.spmi.2013.05.019 Get rights and content

Highlights

•
Theoretical investigations of lasing characteristics of GRIN-InGaAlAs/InP.
•
Behavior of transparency current density, saturated modal gain and maximum optical loss.
•
Temperature and GRIN steps dependent modal gain characteristics along with anti-guiding factor within TE and TM modes.

Abstract

The paper deals with theoretical investigations of lasing characteristics of GRIN-InGaAlAs/InP nano-heterostructures and specially, the studies have been directed towards the modal gain characteristics within TE and TM polarization modes. The behavior of transparency current density, saturated modal gain and maximum optical loss have also been reported for the SQW and MQWs based lasing nano-heterostructures by studying these parameters for different number of quantum wells. In addition, the temperature and GRIN steps dependent modal gain characteristics along with anti-guiding factor within TE and TM modes have been reported. Since the structure studied in the paper provides maximum gain at the wavelength of 1.55 μm and 1.33 μm (wavelengths of minimum attenuation), hence the results reported are very informative for the researchers working in the area of nano-opto-electronics for optical fiber communication systems.

Introduction

Recently, the separate confinement heterostructures (SCH) have been reported as an essential element of the quantum well based lasing heterostructures [1]. Depending on the index profile, the SCH can be classified into two: graded index (GRIN-SCH) and step index (STEP–SCH). The GRIN-SCH based lasing nano heterostructures have been reported to have various advantages over STEP-SCH based nano structures such as higher injection efficiency, higher trapping efficiency, and noticeably shorter doping time and enhanced carrier confinement [2], [3], [4], [5]. The high optical/material gain, however, has been reported by Alvi et al. [6] for GRIN-SCH based lasing structures of InGaAlAs/InP material systems.

Semiconductors based lasing heterostructures and the optical fiber communication systems work at the wavelength 1.55 μm i.e. the most suitable transmission window as it has lowest loss and lies is in the eye safe region for LADAR applications. The dominant material used is GaInAsP on InP substrates. Improved high-temperature operation of InGaAs/AlGaAs high-power quantum-well lasers by short period superlattice barriers has been reported [7]. Auger recombination in strained and unstrained InGaAs/InGaAsP multiple quantum well lasers has been reported very early in 1993 [8]. Inter-valence band absorption in InP and related materials has been done for optoelectronic device modeling [9]. Self-consistent analysis of high temperature effects on strained-layer multi-quantum-well InGaAsP/InP lasers has also been successfully performed [10]. Investigation of the characteristic temperature T₀ for semiconductor lasers has been a subject matter of interest [11]. In a recent research, 1.3 μm AlGaInAs-based semiconductor lasing structures have been found to have nice temperature performance when these are investigated at high pressure and low temperature whereas high-power AlGaInAs strained multiple quantum well lasers operate well at 1.52 μm, however GaInNAs long-wavelength lasers have got their own challenges [12], [13], [14], [15]. 1.3 μm AlGaInAs/InP multiple-quantum-well lasers have been designed and characterized [16], [17]. Higashi et al. have observed a reduction in non-radiative current in same category of strained MQW lasers of same material [18]. High-temperature characteristics in these strained-multiple-quantum-well lasers are a function of the thickness of the well [19]. Yong et al. have done a theoretical study on material gain of 1.3 μm quantum-well InGaAsP, AlGaInAs, and InGaAsN lasers [20]. Intrinsic recombination coefficients are found to be temperature dependent in 1.3 μm InAsP/InP quantum-well semiconductor lasers [21]. Differential carrier lifetime in AlGaN based multiple quantum well deep UV light emitting diodes at 325 nm and small-signal impedance characteristics of quantum-well laser structure are also reported [22], [23]. Work has been done on laser diodes for multispecies gas analysis based on InAs/InGaAs quantum-dash material where water and hydrogen chloride could be detected at absorption lines 13 nm apart [24].

In a recent research, various lasing characteristics such as anti- guiding factor, quasi Fermi levels in conduction and valence bands, gain compression, differential gain have been simulated for Al_0.10Ga_0.90As/GaAs material system based lasing nano heterostructure by Lal et al. [25], in addition, the optical and mode gain as a function of photonic energy and lasing wavelength in both TE and TM modes have also been reported.

In the following sections of the paper, we have proposed GRIN-InGaAlAs/InP lasing nano-heterostructure and discussed its structural detail. For the proposed structure, we have investigated theoretically modal gain characteristics and optical losses within TE and TM modes. The behavior of transparency current density, saturated modal gain and maximum optical loss have also been reported for the multiple-quantum-wells (MQWs) based lasing heterostructure by studying these parameters for different number of quantum wells. In addition, the temperature and GRIN steps dependent modal gain characteristics within TE and TM modes have been reported.

Section snippets

Structural detail

The desired GRIN nano-heterostructure consists of a single quantum well with thickness (60 Å) of InGaAlAs active region which contractive amidst two wide band gap material layers of InGaAlAs (as a barrier) followed by InAlAs material (as a cladding). The band gap of active region is smaller than that of barrier. The energy gap of the barrier is important for selecting the proper material compositions of the quantum well. The main function of the cladding layers is to restrain the light

Brief formalism and theoretical background

Among the various properties of the lasing structures, the most important property is the modal gain experienced by different modes. Lasing in the heterostructures is made possible by the existence of a gain mechanism plus a resonant cavity. In a lasing heterostructure, the gain mechanism is provided by the light generation and recombination of holes and electrons. The simulations of the optical or material gain in the active region of the lasing heterostructures are complicated. For the

Results and discussion

Among the various properties of the lasing heterostructures, the most important property is the modal gain experienced by different modes. In Fig. 2, the modal gain characteristics for SQW and MQWs based GRIN InGaAlAs/InP lasing nano-heterostructure have been plotted with in both TE and TM polarization modes taking into account different number of quantum wells. For a lasing heterostructure having particular number of quantum wells, the modal gain is found to increase with increasing current

Conclusion

We have studied the modal gain characteristics for the GRIN InGaAlAs/InP lasing nano-heterostructure within TE and TM polarization modes. The behavior of transparency current density, saturated modal gain and maximum optical loss have also been reported for the multiple-quantum-wells (MQWs) based lasing nano-heterostructures by studying these parameters for different number of quantum wells. In addition, the temperature and GRIN steps dependent modal gain characteristics within TE and TM modes

Acknowledgements

The work presented was supported by UGC (Ref. F. No. 42-1067/2013 (SR)), Government of India, New-Delhi. Authors are also thankful to Dr. Tso-min Chou, Department of Electrical Engineering, Southern Methodist University, Dallas, TX, USA for his technical support.

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ReviewModal gain characteristics of GRIN-InGaAlAs/InP lasing nano-heterostructures

Highlights

Abstract

Introduction

Section snippets

Structural detail

Brief formalism and theoretical background

Results and discussion

Conclusion

Acknowledgements

Physica E

Systematic study on the confinement structure design of 1.5 μm InGaAlAs/InP multiple-quantum well lasers

Laser Phys.

IEEE J. Quantum Electron.

Appl. Phys. Lett.

IEEE J. Quantum Electron.

Appl. Phys. Lett.

Phys. Scr.

Improved high-temperature operation of InGaAs/AlGaAs high-power quantum-well lasers by short period superlattice barriers

Proc. IEEE LEOS

Auger recombination in strained and unstrained InGaAs/InGaAsP multiple quantum well lasers

Appl. Phys. Lett.

Intervalence band absorption in InP and related materials for optoelectronic device modeling

J. Appl. Phys.

Self-consistent analysis of high temperature effects on strained-layer multiquantum-well InGaAsP-InP lasers

IEEE J. Quantum Electron.

A theoretical investigation of the characteristic temperature T0 for semiconductor lasers

IEEE J. Select. Topics Quantum Electron.

Superior temperature performance of 1.3-μm AlGaInAs-based semiconductor lasers investigated at high pressure and low temperature

Phys. Stat. Sol. (b)

Highly uniform operation of high-performance 1.3-μm AlGaInAs-InP monolithic laser arrays

IEEE J. Quantum Electron.

High-power AlGaInAs strained multiple quantum well lasers operating at 1.52 μm

EL

Review
Modal gain characteristics of GRIN-InGaAlAs/InP lasing nano-heterostructures