Elsevier

Solid State Ionics

Volume 176, Issues 39–40, December 2005, Pages 2963-2966
Solid State Ionics

Electronic structure of proton conducting SrCeO3–SrZrO3 thin films

https://doi.org/10.1016/j.ssi.2005.09.031Get rights and content

Abstract

The electronic structure of the protonic conductor Sr[Ce1−xZrx]0.95Yb0.05O3−δ thin film has been studied by soft-X-ray spectroscopy. The valence band is composed mainly of the O 2p state. The conduction band is composed of Ce 4f and Zr 4d states. The holes and acceptor level are observed at the top of the valence band and just above the Fermi level (EF), respectively. In H2-annealed Sr[Ce1−xZrx]0.95Yb0.05O3−δ thin films, their intensities decrease and the hydrogen-induced level is created at just below EF. The energy separation between the bottom of the hydrogen-induced level and the top of the valence band agrees with the activation energy estimated from the electrical conductivity.

Introduction

Perovskite-type oxides SrCeO3 and SrZrO3 exhibit high protonic conductivity at sufficiently high temperatures when they are doped with acceptor ions [1], [2], [3], [4], [5], [6], [7], [8]. These protonic conductors are important materials for a wide range of electrochemical applications such as fuel cells and hydrogen sensors. For this purpose, many theoretical and experimental investigations have been reported in the case of ceramics and single crystals [9], [10], [11], [12], [13], [14], [15], [16], [17], [18]. The local lattice distortion due to acceptor doping plays an important role in the proton migration in these protonic conductors. Sata et al. attempted to fabricate a locally distorted thin film of protonic conductors by the pulsed laser deposition (PLD) method. They found that the lattice distortion and the protonic conductivity depend on the film thickness ratio of SrZr0.95Yb0.05O3−δ and SrCe0.95Yb0.05O3−δ [19], [20], [21], [22]. In spite of this interesting property, the numbers of both theoretical and experimental studies on protonic conductor thin films are very few.

In this study, the electronic structure of protonic conductor Sr[Ce1−xZrx]0.95Yb0.05O3−δ thin films has been investigated by X-ray absorption spectroscopy (XAS). The XAS is related directly to the electronic structure of unoccupied states [23], [24], [25]. This is a rather local process, because of the localized core state. It is governed by the dipole selection rules so that XAS gives the spectrum relating to the site- and symmetry-selected density-of-state (DOS). Thus, the holes at the top of valence band and acceptor level just above the Fermi level (EF), which provide the electrical conductivity, might be observed by careful measurements using high-resolution and high-brightness XAS. A soft-X-ray emission spectroscopy (SXES) spectrum, which reflects the electronic structure of occupied states [23], has been also measured. In this paper, we present high-resolution XAS spectra of Sr[Ce1−xZrx]0.95Yb0.05O3−δ thin films and show how the XAS peaks found in the band gap region are related to the protonic conductivity.

Section snippets

Experimental

Sr[Ce1−xZrx]0.95Yb0.05O3 thin films were prepared by the PLD method using an ArF excimer laser (λ = 193 nm). Sintered ceramics of SrZr0.95Yb0.05O3 and SrCe0.95Yb0.05O3 were used as ablation targets. The Zr concentration was x = 0 and 0.2. A single crystal of Si (111) was used as the substrate. The substrate temperature during deposition was about 700 °C. The ablation chamber was evacuated to 10 7 Pa and then 0.5 Pa oxygen gas was introduced into the chamber only after deposition started to avoid

Results and discussion

Fig. 1 shows the O 1s SXES spectra of H2-annealed Sr[Ce1−xZrx]0.95Yb0.05O3−δ (x = 0, 0.2) thin films. As reference, the O 1s SXES spectrum of dried SrCeO3 thin film is also shown. The intensities of the SXES spectra are normalized to the beam current and measurement time. The clear selection rule of SXES is caused mainly within the same atomic species, because the core hole is strongly localized. For this reason, the O 1s SXES spectra reflect the O 2p PDOS. The obtained O 2p PDOS corresponds to

Conclusion

We have studied the electronic structure of protonic conductor Sr[Ce1−xZrx]0.95Yb0.05O3−δ thin films using SXES and XAS. The valence band is composed of O 2p states. EF of H2-annealed Sr[Ce1−xZrx]0.95Yb0.05O3−δ thin films shift to the conduction band by ∼0.6 eV. In a dried Sr[Ce1−xZrx]0.95Yb0.05O3−δ thin film, the holes and acceptor level are observed at the top of the valence band and just above EF, respectively. In H2-annealed Sr[Ce1−xZrx]0.95Yb0.05O3−δ thin film, the hole states are absent

Acknowledgements

This work was partly supported by the Foundation for Promotion of Material Science and Technology of Japan (MST Foundation) and the Grant-in-Aid for Science Research from the Ministry of Education, Culture, Sports, Science and Technology.

References (26)

  • H. Iwahara et al.

    Solid State Ionics

    (1981)
  • T. Yajima et al.

    Sens. Actuators, B, Chem.

    (1993)
  • S. Shin et al.

    Solid State Ionics

    (1990)
  • H.H. Huang et al.

    Solid State Ionics

    (1991)
  • K.S. Knight

    Solid State Ionics

    (1994)
  • F. Genet et al.

    Solid State Ionics

    (1999)
  • T. Omata et al.

    Solid State Ionics

    (2004)
  • S.J. Song

    Solid State Ionics

    (2004)
  • N. Sata et al.

    Solid State Ionics

    (1999)
  • N. Sata et al.

    Solid State Ionics

    (1999)
  • N. Sata et al.

    Solid State Ionics

    (2000)
  • T. Higuchi et al.

    Nucl. Instrum. Methods Phys. Res., B Beam Interact. Mater. Atoms

    (2003)
  • T. Higuchi et al.

    Solid State Ionics

    (2002)
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