Elsevier

Thin Solid Films

Volume 515, Issue 15, 31 May 2007, Pages 5985-5991
Thin Solid Films

Structural aspects of adamantine like multinary chalcogenides

https://doi.org/10.1016/j.tsf.2006.12.100Get rights and content

Abstract

The present state of knowledge of structure, phase relations and metal ordering in 2(ZnX)x(CuBX2)1  x (B = Ga, In and X = S, Se, Te) and Cu2ZnxFe1  xSnS4 multinary compounds is discussed. The chemical disorder process in 2(ZnX)x(CuBX2)1  x alloys leads to a phase separation, i.e. in a certain composition range (2-phase field) two phases, tetragonal domains and a cubic matrix, coexist. Its width depends on the three-valent cation only and is independent from the size of anion. In the subsolidus region of the 2(ZnX)x(CuBX2)1  x system the stability range of tetragonal mixed crystals as well as the miscibility gap is decreasing, the stability range of cubic mixed crystals is increasing. The process of structural disorder in 2(ZnX)x(CuBX2)1  x as well as Cu2Fe1  xZnxSnS4 alloys is connected to the cation substructure. In tetragonal 2(ZnX)x(CuInX2)1  x alloys a non-random Zn distribution on the both cation positions of the chalcopyrite-type structure was revealed, whereas a random distribution of Zn and Cu on two different sites of the kesterite type structure was obtained in Cu2ZnSnS4 in contradiction to literature. The crossover from stannite (x = 0) to kesterite (x = 1) in Cu2Fe1  xZnxSnS4 is considered as a three-stage process of cation restructure involving Cu+, Zn2+ and Fe2+, whereas Sn4+ does not take part in this process. In tetragonal 2(ZnX)x(CuInX2)1  x alloys the anion displacement is decreasing with increasing ZnX content in CuInX2 indicating a decreasing tetragonal distortion. Here the disorder process in the cation substructure and the displacement process in the anion substructure are coupled.

Introduction

In the well known diamond structure (space group Fdm) each atom is surrounded by four nearest neighbours situated at the corners of a regular tetrahedron forming a tetrahedrally bonded structure. Its lattice can be foreseen as two interpenetrating face centered cubic sub-lattices. The diamond structure forms the source of a family of structures based on the ordering of atoms on the two substructures [1]. An important feature of all tetrahedral structures is that each atom may be pictured as making four covalent bonds and thus requires four valence electrons. All compounds with structures derived from diamond are said to be “adamantine” [1]. Considering the rule that the average number of valence electrons per atom is four a wide range of tetrahedral structures can be derived. In multinary compounds the two substructures are populated with cations and anions respectively. Binaries have the common formula ANB8  N (N = 1; 2; 3) [2]. The well known representatives are AIIBVI compounds (N = 2; A = Zn, Cd, Hg; B = S, Se, Te) which crystallize in the cubic sphalerite-type structure (space group F4¯3m) and in the hexagonal wurtzite type (space group P63mc). For ternary compounds the formula AN  1BN + 1X28  N results [2]. The compounds AIBIIIX2VI (N = 2; A = Cu, Ag; B = Al, Ga, In; X = S, Se, Te) crystallize in the tetragonal chalcopyrite-type structure (space group I4¯2d) [2]. The ordered substitution of the metal in II–VI compounds by two metals (I and III) doubles the identity period of the initial cubic unit cell (by definition along the z-direction) with a tetragonal distortion η = c / 2a  1 due to different interactions between A–X and B–X resulting in different bond length (RAX  RBX) and bond angles. This leads to a displacement of the anions from the ideal tetrahedral site by a quantity |u  ¼| (where u is the anion x coordinate). The parameters η and u are called the structural degrees of freedom of the chalcopyrite-type structure [3]. The prototype of this group is the mineral chalcopyrite (CuFeS2). Lowering the symmetry one step further leads to the stannite-type structure (space group I4¯2m) named after the mineral stannite Cu2FeSnS4 [4]. A symmetry decrease is not only achieved by ordered substitution of the metals, but also by changing the metal ordering, i.e. the arrangement of the cations on the structural sites of the unit cell. By doing so the kesterite type structure (space group I4¯) can be deduced from the stannite-type structure, which is named after the mineral kesterite Cu2ZnSnS4 [4].

The anion displacement is increasing with symmetry degradation from the sphalerite (ideal position (¼,¼,¼,))  chalcopyrite (x,¼,1/8)  stannite(x,x,z)  kesterite (x,y,z) type structure. In this sequence the anion position is characterized by an increasing number of free atomic coordinates, i.e. from one in the chalcopyrite-type structure to three in the kesterite type structure. Note that in the chalcopyrite-type structure two different cations are involved in the cation tetrahedra (A2B2X) whereas in the stannite and kesterite type structure three different cations form the tetrahedra (A2BCX).

An overview of this part of the adamantine compound family is shown in Fig. 1 and Table 1.

The ternary AIBIIIX2VI chalcopyrites have attracted considerable attention for practical applications, amongst others as absorber layers in thin film solar cells. Moreover the range of commonly used photovoltaic materials can be expanded by crossing over to multinary semiconductors, i.e. alloys between the non-isotype II–VI binaries and I–III–VI2 ternaries. They offer the advantage to vary the band gap at room temperature from the large value of the binary wide band gap semiconductor (e.g. ZnX) towards the band gap of the ternary chalcopyrite-type end member (e.g. CuInX2) [5]. Moreover a better match of the lattice metrics between substrate (in case of single crystalline substrates e.g. Ge) and absorber layer is possible. In this connection structural aspects of 2(ZnX)x(CuBX2)1  x alloys (B = Ga, In and X = S, Se, Te) will be discussed in the present work.

The site preference of Zn2+ in tetragonal 2(ZnX)x(CuBX2)1  x mixed crystals is important, because a non-random distribution gives rise to Cu–In anti-site effects resulting in defects influencing the electronic properties of the material. The elements Cu and Zn are neighbours in the periodic table, Cu+ and Zn2+ have the same number of electrons (28). Their atomic scattering factor f, determining the structure factor Fhkl byFhkl=jfj·exp{2πi(hxj+kyj+lzj)}which is proportional to the measured intensity in an X-ray diffraction experiment, is identical. Hence both these cations are not distinguishable by conventional X-ray diffraction. The problem can be solved using neutron diffraction, because of the different neutron scattering lengths of Cu and Zn (bCu = 7.718 fm, bZn = 5.67 fm [6]). In Eq. (1) the atomic scattering factor f is then replaced by the neutron scattering length b.

In case one structural site is occupied by different elements (for instance two different atoms A and B occupy a site j), the average neutron scattering length of the site can be calculated byb¯j=Aj·bA+Bj·bB.

Here Aj describes the fraction (or occupancy) of atom A on site j and Bj the fraction of atom B on site j (with Aj + Bj = 1). Using Eq. (2) the average neutron scattering length can be calculated (j(calc)) on the assumption of a distribution model. Otherwise the experimentally obtained site occupancy, determined by Rietveld analysis of the neutron diffraction data, allows to evaluate an experimental average neutron scattering lengths (j(exp)). By variation of the distribution model a cation distribution which fulfill the condition (exp) = (calc) can be revealed.

The most efficient thin film solar cells these days with a current record efficiency of 18.8% on the laboratory scale [7] contain a Cu(In,Ga)Se2 absorber layer. Since the availability of indium is an object of discussion regarding the large-scale production of CuInSe2 solar cells [8], its replacement with other elements, for instance Zn and Sn, is reconceived. The discussion in literature goes about In-free photovoltaics, as for instance compounds belonging to the stannite-type or also kesterite type structure family [9], [10]. In this connection the Cu2FeSnS4–Cu2ZnSnS4 series will be discussed in the present work. Their two structures, the stannite and kesterite type structures, are based on different distributions of Cu+, Zn2+ and Fe2+ among the positions at (0,0,0), (0,½,¼) and (0,¼,¾) [4]. To get a knowledge about the metal distribution among the tetrahedral cavities in Cu2ZnxFe1  xSnS4 neutron diffraction has to be applied. The cations Cu+ and Zn2+ are involved, causing the differentiation problems in X-ray diffraction as described above.

The work presented here will give an overview and a generalization of our detailed investigations about structure and phase relations as well as metal ordering [11], [12], [13], [14], [15], [17] of adamantine multinary chalcogenides.

Section snippets

Experimental

The diffraction experiments using neutrons, X-rays and electrons were done on polycrystalline samples. Powders were synthesized by solid state reaction from the elements in sealed evacuated silica tubes. The temperatures were T = 950 °C (X = S), T = 850 °C (X = Se) and T = 700 °C (X = Te) for 2(ZnX)x(CuBX2)1  x alloys (B = Ga, In and X = S, Se, Te) and T = 750 °C for Cu2Fe1  xZnxSnS4 compounds. The first were cooled down to room temperature at a controlled cooling rate of 10 K/h, the latter were quenched

The composition dependent phase transition in 2(ZnX)x(CuBX2)1  x alloys (B = Ga, In and X = S, Se, Te) — phase separation by chemical disorder

The Rietveld analysis of the neutron diffraction data and the TEM investigations revealed that within the 2(ZnX)x(CuBX2)1  x solid solution series a composition range occurs where two phases, namely tetragonal domains (phase α) and a cubic matrix (phase β), coexist (see Fig. 2). This region was named 2-phase field. Its width and the composition of its end members depend on the cations and anions of the CuBX2 chalcopyrite. The end member composition of the transition α  α + β depends on the

Conclusions

This work presents an overview about disorder and displacement processes in adamantine multinary chalcogenides.

The chemical disorder process in 2(ZnX)x(CuBX2)1  x multinary compounds leads to a phase separation. By alloying CuBX2 into 2ZnX the cations Zn2+, Cu+ and BIII are disordered at the cation site of the sphalerite-type structure until a certain composition x(β  α + β) is reached, where the α (with chalcopyrite-type structure) and the β phases (with sphalerite-type structure) separate. The

References (24)

  • S. Schorr et al.

    J. Alloys Comp.

    (2006)
  • H. Katagiri

    Thin Solid Films

    (2005)
  • H. Katagiri et al.

    Sol. Energy Mater. Sol. Cells

    (2001)
  • S. Schorr et al.

    J. Alloys Comp.

    (2005)
  • G. Wagner et al.

    J. Cryst. Growth

    (2005)
  • G. Wagner et al.

    J. Solid State Chem.

    (2005)
  • L. Roussak et al.

    J. Solid State Chem.

    (2005)
  • S. Schorr et al.

    J. Phys. Chem. Solids

    (2005)
  • M. Robbins et al.

    J. Solid State Chem.

    (1972)
  • B. Pamplin

    Prog. Cryst. Growth Charact.

    (1981)
  • G. Kühn et al.

    Z. Chem.

    (1987)
  • J.E. Jaffe et al.

    Phys. Rev., B

    (1984)
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