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The Role of Surface Chemistry on Spreading Kinetics of Molten Silicides on Silicon Carbide

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Interface Science

Abstract

The spreading time for millimeter-sized droplets of nonreactive molten silicides on silicon carbide in high vacuum is several orders of magnitude higher than typical spreading times observed in nonreactive metal/ceramic systems. To explain this paradox, two types of experiments were performed: (i) wetting experiments for various nonreactive CuSi alloys on α-SiC single crystals using the sessile drop and dispensed drop techniques, with emphasis on determining the initial contact angle; and (ii) characterization of surface chemistry of SiC after different heat treatments in high-vacuum furnaces. It is shown that spreading kinetics in these systems are controlled by the kinetics of removing of wetting barriers present or developed in situ on SiC surface.

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Authors and Affiliations

  1. Laboratoire de Thermodynamique et Physico-Chimie Métallurgiques (UMR 5614 CNRS/INPG/UJF), E.N.S.E.E.G., BP. 75, 38402, Saint Martin d'Hères, France

    C. Rado & N. Eustathopoulos

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  1. C. Rado
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  2. N. Eustathopoulos
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Correspondence to N. Eustathopoulos.

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Rado, C., Eustathopoulos, N. The Role of Surface Chemistry on Spreading Kinetics of Molten Silicides on Silicon Carbide. Interface Science 12, 85–92 (2004). https://doi.org/10.1023/B:INTS.0000012297.30968.02

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  • DOI: https://doi.org/10.1023/B:INTS.0000012297.30968.02

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