References
H. Y. Hwang, S. W. Cheong, P. G. Radaelli, M. Marezio and B. Batlogg, Phys. Rev. Lett. 75 (1995) 914.
G. J. Snyder, R. S. Hiskes, M. Dicarolis, R. Beasley and T. H. Geballe, Phy. Rev. B 53 (1996) 14434.
C. H. Booth, F. Bridge, G. J. Synder and T. H. Geballe, ibid. 54 (1996) R15606.
M. Jaime, M. B. Salamon, M. Rubinstein, R. E. Treece, J. S. Horwitz and D. B. Chrisey, ibid. 54 (1996) 11914.
C. Zener, Phys. Rev. 82 (1951) 403.
A. J. Mills, P. B. Littlewood and B. I. Shraiman, Phys. Rev. Lett. 74 (1995) 5144.
A. J. Mills, Phys. Rev. B 53 (1996) 8434.
A. Gupta, G. Q. Gong, G. Xiao, P. R. Duncombe, P. Lecoeur, P. Trouillod, Y. Y. Wang, V. P. Dravid and J. Z. Sun, ibid. 54 (1996) R15629.
N. F. Mott, ‘Metal-insulator transitions’ (Taylor & Francis, London, 1974).
W. E. Pickett and D. J. Singh, Phys. Rev. B 53 (1996) 1146.
D. K. Paul and S. S. Mitra, Phys. Rev. Lett. 31 (1973) 1000.
P. S. Prabhu and U. V. Varadaraju, Phys. Rev. B 53 (1996) 1146.
W. H. Jung, H. Nakatsugawa and E. Iguchi, J. Solid. State. Chem. in press.
W. H. Jung and E. Iguchi, J. Phys. D, Appl. Phys. In press.
N. F. Mott and E. A. Davis, “Electronic process in noncrystalline materials” (Clarendon Press, Oxford, 1979).
I. G. Austin and E. S. Garbett, “Electronic and structural properties of amorphous semiconductors” (Academic Press, New York, 1973).
D. Emin, Adv. Phys. 24 (1975) 305.
N. Gayathri, A. K. Raychauduri, S. K. Tiwary, R. Gundakaram, A. Arulrai and C. N. R. Rao, Phys. Rev. B 56 (1997) 1345.
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Jung, WH. Evaluation of Mott's Parameters for Hopping Conduction in La0.67Ca0.33MnO3 Above Tc. Journal of Materials Science Letters 17, 1317–1319 (1998). https://doi.org/10.1023/A:1006665200481
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DOI: https://doi.org/10.1023/A:1006665200481