Abstract
The physicochemical processes associated with the interaction between a chalcogenide vitreous semiconductor (CVS) and a metal (Me) in thin-layer structures obtained upon vacuum deposition of the As2S3 and Cu films have been investigated by resistometric and ellipsometric techniques. The influence of the interface between the layers, the conditions of preparing chalcogenide films, and the properties of environment on the deposition process are studied. The mechanism of the chemical process is qualitatively explained within the thermochemical approach.
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Sopinskii, N.V., Kostyshin, M.T. Features of Physicochemical Processes in Thin-Film Structures Based on Chalcogenide Vitreous Semiconductor and Copper. Glass Physics and Chemistry 26, 569–576 (2000). https://doi.org/10.1023/A:1007152231211
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DOI: https://doi.org/10.1023/A:1007152231211