Abstract
The deposition of ZnO films on different substrates by electron-beam evaporation is studied experimentally. The substrate is essentially held at a negative bias voltage during the process. The dependence of the lattice structure and photoluminescence spectra of the films on the type of substrate and the bias is investigated. It is shown that the incident ion stream resulting from the negative bias allows one to produce films at a lower substrate temperature. The bias that provides epitaxial growth is found to lie between –400 and –200 V. It is determined that the films deposited on (0001)-oriented sapphire have a carrier concentration of 7.5 × 1018 cm–3 and a Hall mobility of 18.4 cm2/(V s).
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REFERENCES
Klingshirn, C., The Luminescence of ZnO under One-and Two-Quantum Excitation, Phys. Status Solidi B, 1975, vol. 71, pp. 547-556.
Webb, J.B. and William, D.F., Transparent and Highly Conductive Films of ZnO Prepared by RF Reactive Magnetron Sputtering, Appl. Phys. Lett., 1981, vol. 39, pp. 640-642.
Tuttle, J.R., Contreras, M.A., Gillespie, T.J., Garbor, R.K., and Noufi, R., Prog. Photovoltaics Res. Appl., 1995, vol. 3, pp. 235-240.
Hvam, J.M., Optical Gain and Induced Absorption from Excitonic Molecules in ZnO, Solid State Commun., 1978, vol. 26, pp. 987-990.
Hvam, J.M., Exciton-Exciton Interaction and Laser Emission in High-Purity ZnO, Solid State Commun., 1973, vol. 12, pp. 95-97.
Bagnall, D.M., Chen, Y.F., and Zhu, Z., Optically Pumped Lasing of ZnO at Room Temperature, Appl. Phys. Lett., 1997, vol. 70, pp. 2230-2232.
Bagnall, D.M., Chen, Y.F., and Shen, M.Y., Room Temperature Excitonic Stimulated Emission from Zinc Oxide Epilayers Grown by Plasma-Assisted MBE, J. Cryst. Growth, 1998, vols. 184-185, pp. 605-609.
Georgobiani, A.N., Kotlyarevskii, M.B., Kidalov, V.V., and Rogozin, I.V., ZnO/ZnSe Structures Prepared by Radical-Beam Getter Epitaxy, Inorg. Mater., 1997, vol. 33, no. 2, pp. 185-188.
Minegishi, K., Koiwai, Y., and Kikuchi, Y., Growth of p-Type Zinc Oxide Films by Chemical Vapor Deposition, Jpn. J. Appl. Phys., 1997, vol. 36, pp. L1453-L1455.
Joseph, M., Tabata, H., and Kawai, T., p-Type Electrical Conduction in ZnO Thin Films by Ga and N Codoping, Jpn. J. Appl. Phys., 1999, vol. 38, pp. L1205-L1207.
Yamamoto, T. and Katayama-Yoshida, H., Solution Using a Codoping Method to Unipolarity for the Fabrication of p-Type ZnO, Jpn. J. Appl. Phys., 1999, vol. 38, pp. L166-L169.
Ray, Y.R., Kim, W.J., and White, H.W., Fabrication of Homostructural ZnO p-n Junctions, J. Cryst. Growth, 2000, vol. 219, pp. 419-422.
Guo, X.L., Choi, J.H., and Tabata, H., Fabrication and Optoelectronic Properties of a Transparent ZnO Homostructural Light-Emitting Diode, Jpn. J. Appl. Phys., 2001, vol. 40, pp. L177-L180.
Johnson, M.A., Fujita, S., and Rowland, W.H., MBE Growth and Properties of ZnO on Sapphire and SiC Substrates, J. Electron. Mater., 1996, vol. 25, pp. 855-862.
Miura, M., Crystallographic Character of ZnO Thin Films Formed at Low Sputtering Gas Pressure, Jpn. J. Appl. Phys., 1982, vol. 21, pp. 264-271.
Cho, S., Ma, J., and Kim, H., Photoluminescence and Ultraviolet Lasing of Polycrystalline ZnO Thin Films Prepared by the Oxidation of the Metallic Zn, Appl. Phys. Lett., 1999, vol. 75, pp. 2761-2763.
Vispute, R.S., Talyansky, V., and Choopun, J., Heteroepitaxy of ZnO on GaN and Its Implantations for Fabrication of Hybrid Optoelectronic Devices, Appl. Phys. Lett., 1998, vol. 73, pp. 348-350.
Dinh, L.N., Schildbach, M.A., and Balooch, M., Pulsed Laser Deposition of ZnO Nanocluster Films by Cu-Vapor Laser, J. Appl. Phys., 1999, vol. 86, pp. 1149-1152.
Fons, P., Iwata, K., and Niki, S., Growth of High-Quality Epitaxial ZnO Films on d-Al2O3, J. Cryst. Growth, 1999, vols. 201–202, pp. 627-632.
Chen, Y., Bagnall, D.M., and Koh, H.J., Plasma Assisted Molecular Beam Epitaxy of ZnO on c-Plane Sapphire: Growth and Characterization, J. Appl. Phys., 1998, vol. 84, pp. 3912-3918.
Zu, P.S., Tong, Z.K., and Wong, G.K., Ultraviolet Spontaneous and Stimulated Emission from ZnO Microcrystallite Thin Films at Room Temperature, Solid State Commun., 1997, vol. 103, pp. 459-463.
Brewer, L., The Thermodynamic Properties of the Oxides and Their Vaporisation Processes, Chem. Rev., 1953, vol. 52, pp. 36-40.
Blaut-Blachev, A.N., Polycrystalline Gallium Nitride Films Grown by Magnetron Sputtering, Fiz. Tekh. Poluprovodn. (S.-Peterburg), 2001, vol. 35, pp. 718-719.
Tominaga, K., Iwamura, S., and Fujuta, I., Influence of Bombardment by Energetic Atoms on c-Axis Orientation of ZnO Films, Jpn. J. Appl. Phys., 1982, vol. 21, pp. 999-1002.
Butkhuzi, T.V., Chelidze, T.G., Georgobiani, A.N., Jash-iashvili, D.L., Khulordava, T.G., and Tsekvava, B.E., Exciton Photoluminescence of Hexagonal ZnO, Phys. Rev. B, 1998, vol. 58, no. 16, pp. 10692-10695.
Wu, H.Z., He, K.M., Qiu, D.J., and Huang, D.M., Low-Temperature Epitaxy of ZnO Films on Si(001) and Silica by Reactive E-beam Evaporation, J. Cryst. Growth, 2000, vol. 217, pp. 131-137.
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Gruzintsev, A.N., Volkov, V.T. & Matveeva, L.N. ZnO Films Deposited by Electron-Beam Evaporation: The Effect of Ion Bombardment. Russian Microelectronics 31, 193–199 (2002). https://doi.org/10.1023/A:1015415120927
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DOI: https://doi.org/10.1023/A:1015415120927