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Effects of recovery annealing on reliability of SrBi2Ta2O9 based ferroelectric memory devices

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Journal of Materials Science Letters

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Authors and Affiliations

  1. Department of Materials Engineering, Kookmin University, Seoul, 136-702, South Korea

    June-Mo Koo & Jiyoung Kim

  2. School of Metallurgy and Materials Engineering, Chosun University, Kwangju, 501-759, South Korea

    Eun-Gu Lee

Authors
  1. June-Mo Koo
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  2. Jiyoung Kim
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  3. Eun-Gu Lee
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Koo, JM., Kim, J. & Lee, EG. Effects of recovery annealing on reliability of SrBi2Ta2O9 based ferroelectric memory devices. Journal of Materials Science Letters 21, 653–655 (2002). https://doi.org/10.1023/A:1015656508960

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