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Ultrathin silicon oxide film growth with in situ passivation by using pyrolytic N2O

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Journal of Materials Science Letters

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  1. NTT Telecommunications Energy Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa, 243-0198, Japan

    H. Yamada

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  1. H. Yamada
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Yamada, H. Ultrathin silicon oxide film growth with in situ passivation by using pyrolytic N2O. Journal of Materials Science Letters 21, 1493–1495 (2002). https://doi.org/10.1023/A:1020084012177

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