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Crystallization and Phase Equilibria in the Tb2O3–Ga2O3 System

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Abstract

The gallium-rich portion of the Tb2O3–Ga2O3 system is studied experimentally. It is found that the compound Tb3 + x Ga5 – x O12 (0 < x < 0.1) undergoes a congruent melting. The TbGaO3 compound exists only near the peritectic melting temperature and undergoes an incongruent melting. The liquidus curve is determined experimentally in the region of primary crystallization of Tb3Ga5O12. The conditions of growing Tb3Ga5O12 single crystals by the Czochralski method are analyzed.

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Authors and Affiliations

  1. Grebenshchikov Institute of Silicate Chemistry, Russian Academy of Sciences, ul. Odoevskogo 24/2, St. Petersburg, 199155, Russia

    Yu. P. Udalov, R. M. Rakhmankulov, T. Yu. Chemekova & O. L. Belousova

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  1. Yu. P. Udalov
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  2. R. M. Rakhmankulov
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  3. T. Yu. Chemekova
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  4. O. L. Belousova
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Udalov, Y.P., Rakhmankulov, R.M., Chemekova, T.Y. et al. Crystallization and Phase Equilibria in the Tb2O3–Ga2O3 System. Glass Physics and Chemistry 29, 200–201 (2003). https://doi.org/10.1023/A:1023419528244

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