Abstract
Experimental data on the lattice parameter, thermoelectric power, and microhardness of PbTe〈In〉 crystals and the conversion fromp- to n-type with increasing indium content can be interpreted under the assumption that the indium in PbTe〈In〉 has variable valence: 2In2+ ↔ In+ + In3+. A crystal-quasi-chemical model is proposed for defect formation in PbTe〈In〉: the incorporation of In+ into octahedral interstices and In3+ into tetrahedral interstices of the close packing of Te atoms, accompanied by In2Te3 precipitation.
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Freik, D.M., Boichuk, V.M. & Mezhilovskaya, L.I. Charge State of Indium and Point Defects in Indium-Doped Lead Telluride Crystals. Inorganic Materials 40, 1026–1031 (2004). https://doi.org/10.1023/B:INMA.0000046462.80064.d8
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DOI: https://doi.org/10.1023/B:INMA.0000046462.80064.d8