Abstract
Nanoelectromechanical (NEM) switches are similar to conventional semiconductor switches in that they can be used as relays, transistors, logic devices and sensors. However, the operating principles of NEM switches and semiconductor switches are fundamentally different. These differences give NEM switches an advantage over semiconductor switches in some applications — for example, NEM switches perform much better in extreme environments — but semiconductor switches benefit from a much superior manufacturing infrastructure. Here we review the potential of NEM-switch technologies to complement or selectively replace conventional complementary metal-oxide semiconductor technology, and identify the challenges involved in the large-scale manufacture of a representative set of NEM-based devices.
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References
International Technology Roadmap for Semiconductors (ITRS, 2009); http://www.itrs.net/home.htmlThe ITRS discusses the expected needs of the semiconductor industry, and the challenges facing the industry, over the next 15 years. New editions are published in odd years, and updates are published in even years.
International Roadmap Committee Future Memory Devices Workshop Summary (2010); http://www.itrs.net/Links/2010ITRS/Home2010.htm
Zhou, Y., Thekkel, S. & Bhunia, S. in Proc. 2007 ACM/IEEE Int. Symp. on Low Power Electron. Des. 14–19 (IEEE, 2007).
Dadgour, H. F. & Banerjee, K. Hybrid NEMS–CMOS integrated circuits: A novel strategy for energy-efficient designs Comp. Digital Techn. 3, 593–608 (2009). This paper presents a comprehensive proposal for hybrid NEM–CMOS devices, including the feasibility of integrating NEMS and CMOS, and predicted improvements in power consumption compared with conventional CMOS.
Abele, N. et al. in IEEE Int. Elec. Dev. Meeting 2005; http://dx.doi.org/10.1109/IEDM.2005.1609384
Dadgour, H. F. & Banerjee, K. in Proc. 2007 ACM/IEEE Design Automation Conf. 306–311 (IEEE, 2007).
Yousif, M., Lundgren, P., Ghavanini, F., Enoksson, P. & Bengtsson, S. CMOS considerations in nanoelectromechanical carbon nanotube-based switches. Nanotechnology 19, 285204 (2008).
Jonsson, L., Axelsson, S., Nord, T., Viefers, S. & Kinaret, J. High frequency properties of a CNT-based nanorelay. Nanotechnology 15, 1497–1502 (2004).
Lovellette, M. N. et al. in Proc. 2004 IEEE Aerospace Conf. 2300–2305 (IEEE, 2004).
Lee, T-H., Bhunia, S. & Mehregany, M. Electromechanical computing at 500 °C with silicon carbide. Science 329, 1316–1318 (2010).
Dadgour, H. F., Hussain, M. M. & Banerjee, K. in Proc. 2010 ACM/IEEE Int. Symp. on Low Power Electron. Des. 7–12 (ACM, 2010).
Dadgour, H. F., Hussain, M. M., Smith, C. & Banerjee, K. in Proc. 2010 ACM/IEEE Design Automation Conf. 893–896 (ACM, 2010).
Choi, S-J. et al. Transformable functional nanoscale building blocks with wafer-scale silicon nanowires. Nano Lett. 11, 854–859 (2011).
Zhu, H. Nanoelectromechanical digital inverter. US patent 7,612,270 (2009).
Yun, E-J. et al. Multibit electro-mechanical memory device having cantilever electrodes. US patent 7,973,343 (2011).
Bertin, C., Rueckes, T. & Segal, B. EEPROMS using carbon nanotubes for cell storage. US patent 7,528,437 (2009).
Segal, B., Brock, D. & Rueckes, T. Electromechanical memory array using nanotube ribbons and method for making same. US patent 7,511,318 (2009).
Pinkerton, J., Harlan, J. & Mullen, J. Nanoelectromechanical transistors and switch systems. US patent 7,256,063 (2007).
Jang, W. W. et al. NEMS switch with 30-nm-thick beam and 20-nm-thick air-gap for high density non-volatile memory applications. Solid State Electron. 52, 1578–1583 (2008).
Jang, J. et al. Nanoelectromechanical switches with vertically aligned carbon nanotubes. Appl. Phys. Lett. 87, 163114 (2005). The novel use of vertically aligned carbon nanotubes for NEM switches is reported here.
Kinaret, J., Nord, T. & Viefers, S. A carbon-nanotube-based nanorelay. Appl. Phys. Lett. 82, 1287–1289 (2003).
Smith, R. et al. in Proc. 2007 IEEE Aerospace Conf. 1–5 (IEEE, 2007).
Rueckes, T. et al. Carbon nanotube-based nonvolatile random access memory for molecular computing. Science 289, 94–97 (2000). This paper reports one of the first demonstrations of functional NEM switches constructed from individual nanostructures. This technology is now being pursued by Nantero..
Xiang, W. & Lee, C. Nanoelectromechanical torsion switch of low operation voltage for nonvolatile memory application. Appl. Phys. Lett. 96, 193113 (2010).
Li, Q., Koo, S-M., Edelstein, M., Suehle, J. & Richter, C. Silicon nanowire electromechanical switches for logic device application. Nanotechnology 18, 315202 (2007).
Ziegler, K. et al. Bistable nanoelectromechanical devices. Appl. Phys. Lett. 84, 4074–4076 (2004).
Loh, O., Wei, X., Ke, C., Sullivan, J. & Espinosa, H. Robust carbon nanotube-based nanoelectromechanical devices: Understanding and eliminating prevalent failure modes using alternative electrode materials. Small 7, 79–86 (2011).
Han, J-W. et al. Nanowire mechanical switch with a built-in diode. Small 6, 1197–1200 (2010).
Jang, J. et al. Nanoscale memory cell based on a nanoelectromechanical switched capacitor. Nature Nanotech. 3, 26–30 (2008). This paper reports NEM switched capacitors, including demonstrations of data being written to the NEM structures.
Lee, S. et al. A three-terminal carbon nanorelay. Nano Lett. 4, 2027–2030 (2004).
Chen, C. et al. in Proc. ACM/SIGDA Int. Symp. on Field Programmable Gate Arrays 273–282 (ACM, 2010).
Ekinci, K. Electromechanical transducers at the nanoscale: Actuation and sensing of motion in nanoelectromechanical systems (NEMS). Small 1, 786–797 (2005). This review focuses on the use of nanoscale electromechanical resonators for actuation and sensing.
Ekinci, K. & Roukes, M. Nanoelectromechanical systems. Rev. Sci. Instr. 76, 061101 (2005).
Eichler, A. et al. Nonlinear damping in mechanical resonators made from carbon nanotubes and graphene. Nature Nanotech. 6, 339–342 (2011).
Ollier, E. et al. in Proc. IEEE Int. Conf. on Electron. Dev. Solid-State Circuits 1–6 (IEEE, 2008).
Ilic, B. et al. Attogram detection using nanoelectromechanical oscillators. J. Appl. Mech. 95, 3694–3703 (2004).
Ekinci, K., Huang, X. & Roukes, M. Ultrasensitive nanoelectromechanical mass detection. Appl. Phys. Lett. 84, 4469–4471 (2004).
Feng, X. L., He, R., Yang, P. & Roukes, M. L. Very high frequency silicon nanowire electromechanical resonators. Nano Lett. 7, 1953–1959 (2007).
Feng, X. L., White, C. J., Hajimiri, A. & Roukes, M. L. A self-sustaining Ultra-high frequency nanoelectromechanical oscillator. Nature Nanotech. 3, 342–346 (2008).
Madou, M. Fundamentals of Microfabrication 2nd edn (CRC, 2002).
Dadgour, H., Cassell, A. M. & Banerjee, K. in IEEE Int. Electron Devices Meeting 2008; http://dx.doi.org/10.1109/IEDM.2008.4796742
Axelsson, S. et al. Theoretical and experimental investigations of three-terminal carbon nanotube relays. New J. Phys. 7, 245 (2005).
Hayamizu, Y. et al. Integrated three-dimensional microelectromechanical devices from processable carbon nanotube wafers. Nature Nanotech. 3, 289–294 (2008).
Chong, S. et al. in Proc. 2009 Int. Conf. on Computer-Aided Design 478–484 (IEEE, 2009).
Cha, S. et al. Fabrication of a nanoelectromechanical switch using a suspended carbon nanotube. Appl. Phys. Lett. 86, 083105 (2005).
Dujardin, E., Derycke, V., Goffman, M., Lefevre, R. & Bourgoin, J. Self-assembled switches based on electroactuated multiwalled nanotubes. Appl. Phys. Lett. 87, 193107 (2005).
Ke, C. H. & Espinosa, H. D. In-situ electron microscopy electro-mechanical characterization of a NEMS bistable device. Small 2, 1484–1489 (2006).
Jang, W. et al. Fabrication and characterization of a nanoelectromechanical switch with 15-nm-thick suspension air gap. Appl. Phys. Lett. 92, 103110 (2008).
Ke, C. H. & Espinosa, H. D. Feedback controlled nanocantilever device. Appl. Phys. Lett. 85, 681–683 (2004).
Ke, C. H. & Espinosa, H. D. in Proc. 2004 ASME Int. Mech. Eng. Congress 539–542 (ASME, 2004).
Ke, C. H., Espinosa, H. D. & Pugno, N. Numerical analysis of nanotube based NEMS devices — Part II: Role of finite kinematics, stretching and charge concentrations. J. Appl. Mech. 72, 726–731 (2005).
Ward, J. W. et al. in Non-Volatile Memory Technology Symp. 34–38 (IEEE, 2004).
Loh, O., Wei, X., Sullivan, J., Ocola, L., Divan, R. & Espinosa, H. D. Carbon–carbon contacts for robust nanoelectromechanical switches. Adv. Mater. http://dx.doi.org/10.1002/adma.201104889 (2012).
Sazonova, V. et al. A tunable carbon nanotube electromechanical oscillator. Nature 431, 284–287 (2004).
Peng, B. et al. Measurements of near-ultimate strength for multiwalled carbon nanotubes and irradiation-induced crosslinking improvements. Nature Nanotech. 3, 626–631 (2008).
Franklin, A. D. & Chen, Z. Length scaling of carbon nanotube transistors. Nature Nanotech. 5, 858–862 (2010).
Arnold, M. S., Green, A., Hulvat, J., Stupp, S. I. & Hersam, M. C. Sorting carbon nanotubes by electronic structure using density differentiation. Nature Nanotech. 1, 60–65 (2006).
Kinaret, J. M., Nord, T. & Viefers, S. A carbon-nanotube-based nanorelay. Appl. Phys. Lett. 82, 1287–1289 (2003).
Kaul, A., Wong, E., Epp, L. & Hunt, B. Electromechanical carbon nanotube switches for high-frequency applications. Nano Lett. 6, 942–947 (2006).
Ross, P. Nanotechnology — Still waiting for nanotube memory chip IEEE Spectrum 45, 61–62 (January 2008).
Subramanian, A., Dong, L., Nelson, B. & Ferreira, A. Supermolecular switches batch-fabricated from multiwalled nanotubes. Appl. Phys. Lett. 96, 073116 (2010).
Davidson, B. D., Seghete, D., George, S. M. & Bright, V. M. ALD tungsten NEMS switches and tunneling devices. Sens. Actuat. A 166, 269–276 (2011).
Feng, X. L., Matheny, M. H., Zorman, C. A., Mehregany, M. & Roukes, M. L. Low voltage nanoelectromechanical switches based on silicon carbide nanowires. Nano Lett. 10, 2891–2896 (2010).
Bunch, J. et al. Electromechanical resonators from graphene sheets. Science 315, 490–493 (2007).
Schwierz, F. Graphene transistors. Nature Nanotech. 5, 487–496 (2010).
Cui, Y. & Lieber, C. M. Functional nanoscale electronic devices assembled using silicon nanowire building blocks. Science 291, 851–853 (2001).
Huang, Y. et al. Logic gates and computation from assembled nanowire building blocks. Science 294, 1313–1317 (2001).
Cheung, C., Kurtz, A., Park, H. K. & Lieber, C. Diameter-controlled synthesis of carbon nanotubes. J. Phys. Chem. B 106, 2429–2433 (2002).
Javey, A. & Dai, H. Regular arrays of 2 nm metal nanoparticles for deterministic synthesis of nanomaterials. J. Am. Chem. Soc. 127, 11942–11943 (2005).
Durrer, L. et al. SWNT growth by CVD on ferritin-based iron catalyst nanoparticles towards CNT sensors. Sens. Actuat. B 132, 485–490 (2008).
Huang, L. et al. Cobalt ultrathin film catalyzed ethanol chemical vapor deposition of single-walled carbon nanotubes. J. Phys. Chem. B 110, 11103–11109 (2006).
Ilani, S., Donev, L., Kindermann, M. & McEuen, P. Measurement of the quantum capacitance of interacting electrons in carbon nanotubes. Nature Phys. 2, 687–691 (2006).
Ke, C. H. & Espinosa, H. D. Numerical analysis of nanotube based NEMS devices. Part I: Electrostatic charge distribution on multiwalled nanotubes. J. Appl. Mech. 72, 721–725 (2005).
Kang, S. et al. High-performance electronics using dense, perfectly aligned arrays of single-walled carbon nanotubes. Nature Nanotech. 2, 230–236 (2007).
Liu, X., Ryu, K., Badmaev, A., Han, S. & Zhou, C. Diameter dependence of aligned growth of carbon nanotubes on a-plane sapphire substrates. J. Phys. Chem. C 112, 15929–15933 (2008).
Bae, S-S. et al. Roll-to-rollproduction of 30-inch graphene films for transport electrodes. Nature Nanotech. 5, 574–578 (2010).
Cassell, A. et al. Directed growth of free-standing single-walled carbon nanotubes. J. Am. Chem. Soc. 121, 7975–7976 (1999).
Abrams, Z., Ioffe, Z., Tsukernik, A., Cheshnovsky, O. & Hanein, Y. A complete scheme for creating predefined networks of individual carbon nanotubes. Nano Lett. 7, 2666–2671 (2007).
Kuljanishvili, I., Dikin, D. A., Rozhok, S., Mayle, S. & Chandrasekhar, V. Controllable patterning and CVD growth of isolated carbon nanotubes with direct parallel writing of catalyst using dip-pen nanolithography. Small 5, 2523–2527 (2009).
Kraus, T. et al. Nanoparticle printing with single-particle resolution. Nature Nanotech. 2, 570–576 (2007).
Salaita, K., Wang, Y. & Mirkin, C. Applications of dip-pen nanolithography. Nature Nanotech. 2, 145–155 (2007).
Huo, F. et al. Polymer pen lithography. Science 321, 1658–1660 (2008).
Shim, W. et al. Hard-tip, soft-spring lithography. Nature 469, 516–520 (2011).
Kim, K. H., Moldovan, N. & Espinosa, H. D. A nanofountain probe with sub-100 nm molecular writing resolution. Small 1, 632–635 (2005).
Moldovan, N., Kim, K. H. & Espinosa, H. D. Design and fabrication of a novel microfluidic nanoprobe. J. MEMS 15, 204–213 (2006).
Moldovan, N., Kim, K-H. & Espinosa, H. D. A multi-ink linear array of nanofountain probes. J. Micromech. Microeng. 16, 1935–1942 (2006).
Espinosa, H. D. & Loh, O. Annual Technical Report (NSF Nanoscale Science and Engineering Center for Integrated Nanopatterning and Detection Technologies, Northwestern Univ., 2009); http://www.nu-nsec.org/2009%20NSEC%20Annual%20Report.pdf
Mendes, P. et al. Gold nanoparticle patterning of silicon wafers using chemical e-beam lithography. Langmuir 20, 3766–3768 (2004).
Wang, Y. et al. Controlling the shape, orientation, and linkage of carbon nanotube features with nano affinity templates. Proc. Natl Acad Sci. USA 103, 2026–2031 (2006).
Rao, S., Huang, L., Setyawan, W. & Hong, S. Large-scale assembly of carbon nanotubes. Nature 425, 36–37 (2003).
Bae, S. et al. Selectively assembled Co nanoparticle stripes prepared by covalent linkage and microcontact printing. J. Phys. Chem. B 108, 2575–2579 (2004).
Zin, M., Ma, H., Sarikaya, M. & Jen, A. Assembly of gold nanoparticles using genetically engineered polypeptides. Small 1, 698–702 (2005).
Subramanian, A. et al. Batch fabrication of carbon nanotube bearings. Nanotechnology 18, 075703 (2007).
Subramanian, A., Nelson, B., Dong, L. & Bell, D. in 6th IEEE Int. Symp. on Assembly and Task Planning 200–205 (IEEE, 2005).
Li, M. et al. Bottom-up assembly of large-area nanowire resonator arrays. Nature Nanotech. 3, 88–92 (2008).
Li, J., Zhang, Q., Peng, N. & Zhu, Q. Manipulation of carbon nanotubes using AC dielectrophoresis. Appl. Phys. Lett. 86, 153116 (2005).
Krupke, R., Hennrich, F., Lohneysen, H. & Kappes, M. Separation of metallic from semiconducting single-walled carbon nanotubes. Science 301, 344–347 (2003).
Lee, S., Lee, D., Yu, H., Campbell, E. & Park, Y. Production of individual suspended single-walled carbon nanotubes using the a.c. electrophoresis technique. Appl. Phys. A 78, 283–286 (2004).
Schwamb, T. et al. A dielectriphoretic method for high yield deposition of suspended, individual carbon nanotubes with four-point electrode contact. Nano Lett. 7, 3633–3638 (2007).
Banerjee, S. et al. Precise positioning of single-walled carbon nanotubes by a.c. dielectrophoresis. J. Vac. Sci. Technol. B 24, 3173–3178 (2006).
McAlpine, M. C., Ahmad, H., Wang, D. & Heath, J. R. Highly ordered nanowire arrays on plastic substrates for ultrasensitive flexible chemical sensors. Nature Mater. 6, 379–384 (2007).
Green, J. E. et al. A 160-kilobit molecular electronic memory patterned at 1011 bits per square centimetre. Nature 445, 414–417 (2007).
Unarunotai, S. et al. Layer-by-layer transfer of multiple, large area sheets of graphene grown in multilayer stacks on a single SiC wafer. ACS Nano 4, 5591–5598 (2010).
Sun, D-m. et al. Flexible high-performance carbon nanotube integrated circuits. Nature Nanotech. 6, 156–161 (2011).
Hopcroft, M., Nix, W. & Kenny, T. What is the Young's modulus of silicon? J. MEMS 19, 229–238 (2010).
Shacklelford, J. F. & Alexander, W. (eds) CRC Materials Science and Engineering Handbook 3rd edn (CRC, 2001).
Deshpande, V. V. et al. Carbon nanotube linear bearing nanoswitches. Nano Lett. 6, 1092–1095 (2006).
Lee, J-O. et al. in IEEE Int. Electron Devices Meeting 2009; http://dx.doi.org/10.1109/IEDM.2009.5424380
Soogine, C. et al. in IEEE/ACM Int. Conf. on Computer-Aided Design 478–484 (IEEE, 2009).
Han, J-W., Ahn, J-H., Kim, M-W., Yoon, J-B. & Choi, Y-K. in IEEE Int. Electron Devices Meeting 2009; http://dx.doi.org/10.1109/IEDM.2009.5424264
Lin, W. & Zhao, Y-P. Casimir effect on the pull-in parameters of nanometer switches. Microsys. Technol. 11, 80–85 (2005).
Decca, R. et al. Improved tests of extra-dimensional physics and thermal quantum field theory from new Casimir force measurements. Phys. Rev. D 68, 116003 (2003).
International Roadmap Committee. The International Technology Roadmap for Semiconductors (2005); http://www.itrs.net/Links/2005itrs/home2005.htm
Zande, A. M. v. d. et al. Large-scale arrays of single-layer graphene resonators. Nano Lett. 10, 4869–4873 (2010).
Chilstedt, S., Dong, C. & Chen, D. Design and evaluation of a carbon nanotube based programmable architecture. Int. J. Parallel Prog. 37, 389–416 (2009).
Dadgour, H. F., Hussain, M. M., Cassell, A., Singh, N & Banerjee, K. in IEEE Int. Reliability Physics Symp. (IRPS) 3D.3.1–3D.3.10 (2011).
Acknowledgements
H.D.E acknowledges support from the National Science Foundation (CMMI-0555734 and DMR-0907196), the Army Research Office (W911NF-08-1-0061), and the Office of Naval Research (N00014-08-1-0792). The authors thank Xiaoding Wei and Michael Roenbeck for constructive advice and input. O.L. acknowledges the Northwestern University Presidential and Ryan Fellowships.
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Loh, O., Espinosa, H. Nanoelectromechanical contact switches. Nature Nanotech 7, 283–295 (2012). https://doi.org/10.1038/nnano.2012.40
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