Retracted Article: Light-controlled resistive switching memory of multiferroic BiMnO3 nanowire arrays

Bai Sun; Chang Ming Li

doi:10.1039/C4CP04901B

Retracted Article: Light-controlled resistive switching memory of multiferroic BiMnO₃ nanowire arrays†

Bai Sun^abc and Chang Ming Li*^abc

* Corresponding authors

^a Institute for Clean Energy & Advanced Materials (ICEAM), Southwest University, Chongqing 400715, China
E-mail: ecmli@swu.edu.cn
Fax: +86-23-68254969
Tel: +86-23-68254969

^b Faculty of Materials and Energy, Southwest University, Chongqing 400715, China

^c Chongqing Key Laboratory for Advanced Materials and Technologies of Clean Energies, Chongqing 400715, China

Abstract

A multiferroic BiMnO₃ nanowire array was prepared using a hydrothermal process and its resistive switching memory behaviors were further investigated. The prominent ferroelectricity can be well controlled by white-light illumination, thus offering an excellent light-controlled resistive switching memory device using a Ag/BiMnO₃/Ti structure at room temperature.

Physical Chemistry Chemical Physics

Retracted Article: Light-controlled resistive switching memory of multiferroic BiMnO₃ nanowire arrays†

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Physical Chemistry Chemical Physics