Issue 51, 2016, Issue in Progress

Tuning the morphology of Co3O4 on Ni foam for supercapacitor application

Abstract

In this work, NH4F was used as a vital additive to control the morphology of Co3O4 precursors on Ni foam in a conventional hydrothermal reaction, and then, via thermal decomposition, to obtain Co3O4 material. The amount of NH4F plays a pivotal role in the formed morphology of the Co3O4 precursors, and four morphologies of Co3O4 were obtained through close control of the amount of additive: nanowires, thin nanowire-clusters, thick nanowire-clusters, and fan-like bulks. The morphological evolution process of the Co3O4 precursors has been investigated according to their intermediates at different reaction stages, and some novel growth mechanisms are proposed: (1) the amount of NH4F in the solution system affects the chemical composition of the precursors; (2) with an increasing amount of NH4F in the solution system, the morphology will tend to form more ordered states and more distinct hierarchical structures; (3) with an increasing amount of NH4F in the solution system, the growth of products will tend to form denser structures; (4) the amount of NH4F in the solution system will affect the mass loading of products. The four different morphologies of Co3O4 were tested as free-standing electrode materials for supercapacitor application. Co3O4 with the thin-nanowire-cluster morphology exhibits the best electrochemical performance: the specific area capacitance is 1.92 F cm−2 at the current density of 5 mA cm−2 and goes up to 2.88 F cm−2 after 3000 charge–discharge cycles, while the rate capability is 72.91% at the current density of 30 mA cm−2.

Graphical abstract: Tuning the morphology of Co3O4 on Ni foam for supercapacitor application

Supplementary files

Article information

Article type
Paper
Submitted
05 Feb 2016
Accepted
22 Apr 2016
First published
04 May 2016

RSC Adv., 2016,6, 45783-45790

Tuning the morphology of Co3O4 on Ni foam for supercapacitor application

Z. Yu, Z. Cheng, Z. Tai, X. Wang, C. M. Subramaniyam, C. Fang, S. Al-Rubaye, X. Wang and S. Dou, RSC Adv., 2016, 6, 45783 DOI: 10.1039/C6RA03400D

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