Issue 39, 2013
From the journal:

RSC Advances

Ultraviolet and visible photoresponse properties of a ZnO/Si heterojunction at zero bias

Zhiming Bai,†a   Xiaoqin Yan,†a   Xiang Chen,a   Yan Cui,a   Pei Lin,a   Yanwei Shena  and  Yue Zhang*ab  

* Corresponding authors

a State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
E-mail: yuezhang@ustb.edu.cn
Fax: +86-10-62333113
Tel: +86-10-62334725

b Key Laboratory of New Energy Materials and Technologies, University of Science and Technology Beijing, Beijing 100083, People's Republic of China

Abstract

High quality ZnO microwires (MWs) with an electron concentration of 1.06 × 1017 cm−3 and carrier mobility of 1.68 cm2 V−1 s−1 were synthesized by a simple chemical vapor deposition (CVD) method. Based on a single n-type ZnO MW and a p-type Si film, an ultraviolet (UV)-visible photodetector (PD) has been constructed from the p–n junction, which showed a high rectification ratio larger than 103 at ±3 V and an ideal factor of about 2. Under zero bias, the PD exhibited high photosensitivities of ∼2 × 104 and ∼5 × 103 for UV (325 nm) and visible (514 nm) light, respectively, with a fast response time of about 7.4 ms. Also, detailed characterizations indicated that the short-circuit current (Isc) and the open-circuit voltage (Voc) showed square root and logarithmical dependences on the light intensity, respectively. The results support that n-ZnO MW/p-Si film PDs have potential application in the field of UV-visible detection and might be used as elements for powering low-energy micro/nanosystems.

Graphical abstract: Ultraviolet and visible photoresponse properties of a ZnO/Si heterojunction at zero bias

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Article information

DOI
https://doi.org/10.1039/C3RA41713A
Article type
Communication
Submitted
10 Apr 2013
Accepted
30 Jul 2013
First published
31 Jul 2013

RSC Adv., 2013,3, 17682-17688

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Ultraviolet and visible photoresponse properties of a ZnO/Si heterojunction at zero bias

Z. Bai, X. Yan, X. Chen, Y. Cui, P. Lin, Y. Shen and Y. Zhang, RSC Adv., 2013, 3, 17682 DOI: 10.1039/C3RA41713A

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