Copper sulfide thin films were deposited on soda lime glass and Si(100) substrates by atomic layer deposition (ALD) using the β-diketonate-type volatile Cu compound Cu(thd)₂ (thd = 2,2,6,6-tetramethyl-3,5-heptanedione) and H₂S as precursors. Depositions were carried out in the temperature range 125–250 °C. The film growth was surface-controlled in the temperature ranges 125–140 °C and 125–160 °C on glass and silicon substrates, respectively, growth rate being approximately 0.3 Å cycle⁻¹ on both substrates for films of a thickness above approximately 50 nm. For thinner films the growth rate was higher, approximately 0.5 Å cycle⁻¹. The deposited Cu_xS thin films were characterized by X-ray diffraction (XRD), time-of-flight elastic recoil detection analysis (TOF-ERDA), atomic force microscopy (AFM) and four-point resistivity measurements to determine crystallinity, chemical composition and surface morphology as well as surface resistivity (1 × 10⁻⁴ Ω cm), respectively.