Issue 8, 2003

Extended vapor–liquid–solid growth and field emission properties of aluminium nitridenanowires

Abstract

Hexagonal AlN (h-AlN) nanowires with an average diameter of around 15 nm have been prepared by an extended vapor–liquid–solid growth technique and characterized by X-ray diffraction, transmission electron microscopy, energy dispersive X-ray analysis, Raman spectroscopy and field emission measurements. This preparation is a rather simple route for bulk fabrication of h-AlN nanowires. The promising field emission property observed for h-AlN nanowires points to the important application potential of this material.

Graphical abstract: Extended vapor–liquid–solid growth and field emission properties of aluminium nitride nanowires

Article information

Article type
Paper
Submitted
09 Apr 2003
Accepted
28 May 2003
First published
12 Jun 2003

J. Mater. Chem., 2003,13, 2024-2027

Extended vapor–liquid–solid growth and field emission properties of aluminium nitride nanowires

Q. Wu, Z. Hu, X. Wang, Y. Lu, K. Huo, S. Deng, N. Xu, B. Shen, R. Zhang and Y. Chen, J. Mater. Chem., 2003, 13, 2024 DOI: 10.1039/B303987K

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