Issue 10, 2006
From the journal:

Journal of Materials Chemistry

Chemical vapour deposition of II–VI semiconductor thin films using M[(TePiPr2)2N]2 (M = Cd, Hg) as single-source precursors

Shivram S. Garje,a   Jamie S. Ritch,b   Dana J. Eisler,b   Mohammad Afzaal,a   Paul O'Brien*a  and  Tristram Chiversb  

* Corresponding authors

a The School of Chemistry and The School of Materials, The University of Manchester, Oxford Road, Manchester, UK
E-mail: paul.obrien@manchester.ac.uk
Fax: +44 (0)161 275 4616
Tel: +44 (0)161 275 4652

b Department of Chemistry, University of Calgary, Calgary, AB T2N 1N4, Canada

Abstract

The aerosol-assisted chemical vapour deposition (AACVD) of CdTe has been carried out using Cd[(TePiPr2)2N]2 at substrate temperatures between 375 and 475 °C. XRD shows the formation of cubic CdTe between 425 and 475 °C. At low deposition temperature (375 °C), a mixture of hexagonal tellurium and cubic cadmium telluride is observed. SEM images reveal that the growth temperatures do not have a profound effect on the morphologies of films. Surface analysis by XPS of films deposited at 475 °C showed the growth of Te-rich films. The AACVD of Hg[(TePiPr2)2N]2 resulted in deposition of hexagonal tellurium.

Graphical abstract: Chemical vapour deposition of II–VI semiconductor thin films using M[(TePiPr2)2N]2 (M = Cd, Hg) as single-source precursors

About
Cited by
Related
Download options Please wait...

Article information

DOI
https://doi.org/10.1039/B515362J
Article type
Paper
Submitted
28 Oct 2005
Accepted
18 Nov 2005
First published
05 Dec 2005

J. Mater. Chem., 2006,16, 966-969

Permissions

Request permissions

Chemical vapour deposition of II–VI semiconductor thin films using M[(TePiPr2)2N]2 (M = Cd, Hg) as single-source precursors

S. S. Garje, J. S. Ritch, D. J. Eisler, M. Afzaal, P. O'Brien and T. Chivers, J. Mater. Chem., 2006, 16, 966 DOI: 10.1039/B515362J

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Spotlight

Advertisements