Issue 1, 2010

Block copolymer multiple patterning integrated with conventional ArFlithography

Abstract

We present block copolymer multiple patterning as an efficient and truly scalable nanolithography for sub-20 nm scale patterning, synergistically integrated with conventional ArF lithography. The directed assembly of block copolymers on chemically patterned substrates prepared by ArF lithography generated linear vertical cylinder arrays with a 20 to 30 nm diameter, enhancing the pattern density of the underlying chemical patterns by a factor of two or three. This self-assembled resolution enhancement technique affords a straightforward route to highly ordered sub-20 nm scale features via conventional lithography.

Graphical abstract: Block copolymer multiple patterning integrated with conventional ArF lithography

Supplementary files

Article information

Article type
Paper
Submitted
13 Jul 2009
Accepted
24 Aug 2009
First published
17 Sep 2009

Soft Matter, 2010,6, 120-125

Block copolymer multiple patterning integrated with conventional ArF lithography

S. H. Park, D. O. Shin, B. H. Kim, D. K. Yoon, K. Kim, S. Y. Lee, S. Oh, S. Choi, S. C. Jeon and S. O. Kim, Soft Matter, 2010, 6, 120 DOI: 10.1039/B913853F

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