Issue 2, 2011
From the journal:

CrystEngComm

Self-catalytic growth of indium oxide flower-like nanostructures by nano-cluster deposition (NCD) at low temperature†

S. V. N. Pammi,a   Yeon Woong Park,a   Anupama Chanda,a   Jun Ku Ahna  and  Soon Gil Yoon*ab  

* Corresponding authors

a School of Nano Science and Technology, Chungnam National University, Daeduk Science Town, Daejeon, Korea
E-mail: sgyoon@cnu.ac.kr

b Graduate of Analytical Science and Technology (GRAST), Chungnam National University, Daeduk Science Town, Daejeon, Korea

Abstract

Flower-shaped indium oxide nanostructures were grown at a low temperature (250 °C) on Si (100) substrates by NCD technique without using metal catalyst. Bud shaped leaf like structures are obtained with lengths and diameters in the range of 150–250 nm and 75–125 nm, respectively, which are compacted into a flower-shaped structure. Transmission electron microscopy and selected area electron diffraction patterns taken on the leaf-like structure show crystalline cubic phase, with preferential orientation along (222) and (400) directions. The composition of indium and oxygen was confirmed from XPS analysis. The room temperature photoluminescence (PL) spectrum of flower-like In2O3 nanostructure shows a blue emission centered around 428 nm under the 383 nm UV excitation, which is mainly attributed to the oxygen vacancy in the In2O3 nano/microstructures. A growth model for the formation mechanism of the self-catalytic growth of flower shaped structure is proposed.

Graphical abstract: Self-catalytic growth of indium oxide flower-like nanostructures by nano-cluster deposition (NCD) at low temperature

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Article information

DOI
https://doi.org/10.1039/C0CE00222D
Article type
Paper
Submitted
21 May 2010
Accepted
24 Aug 2010
First published
29 Sep 2010

CrystEngComm, 2011,13, 663-667

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Self-catalytic growth of indium oxide flower-like nanostructures by nano-cluster deposition (NCD) at low temperature

S. V. N. Pammi, Y. W. Park, A. Chanda, J. K. Ahn and S. G. Yoon, CrystEngComm, 2011, 13, 663 DOI: 10.1039/C0CE00222D

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