Issue 3, 2012
From the journal:

Dalton Transactions

Construction of graphdiyne nanowires with high-conductivity and mobility†

Xuemin Qian,a   Zhiyuan Ning,b   Yuliang Li,*a   Huibiao Liu,*a   Canbin Ouyang,a   Qing Chenb  and  Yongjun Lia  

* Corresponding authors

a CAS Key Laboratory of Organic Solids, Beijing National Laboratory for Molecular Sciences (BNLMS), Institute of Chemistry Chinese Academy of Sciences, Beijing, (P. R. China)
E-mail: ylli@iccas.ac.cn, liuhb@iccas.ac.cn
Fax: +86-10-826-165-76

b Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics Peking University, Beijing, (P. R. China)

Abstract

GDNWs (graphdiyne nanowires) have successfully been constructed which exhibit a very high quality defect-free surface using the VLS growth process. Measurement of electrical properties showed that the GDNWs produced are excellent semiconductors with a conductivity of 1.9 × 103 S m−1 and a mobility of 7.1 ×102 cm2 V−1 s−1 at room temperature. The results have confirmed that GDNW is indeed a promising and key novel material in electronic and photoelectric fields for both fundamental and potentially practical applications.

Graphical abstract: Construction of graphdiyne nanowires with high-conductivity and mobility

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Article information

DOI
https://doi.org/10.1039/C1DT11641J
Article type
Communication
Submitted
31 Aug 2011
Accepted
10 Nov 2011
First published
29 Nov 2011

Dalton Trans., 2012,41, 730-733

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Construction of graphdiyne nanowires with high-conductivity and mobility

X. Qian, Z. Ning, Y. Li, H. Liu, C. Ouyang, Q. Chen and Y. Li, Dalton Trans., 2012, 41, 730 DOI: 10.1039/C1DT11641J

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