SnO2        nanorod arrays: low temperature growth, surface modification and field emission properties

Hui Huang; Chiew Keat Lim; Man Siu Tse; Jun Guo; Ooi Kiang Tan

doi:10.1039/C1NR10710K

SnO₂nanorod arrays: low temperature growth, surface modification and field emission properties†

Hui Huang,*^a Chiew Keat Lim,^a Man Siu Tse,^a Jun Guo^b and Ooi Kiang Tan*^a

* Corresponding authors

^a School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore
E-mail: hhuang@ntu.edu.sg, eoktan@ntu.edu.sg
Fax: +65 67933318
Tel: +65 67904544

^b School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore

Abstract

SnO₂ nanorod arrays have been deposited on 4 inch SiO₂/Si and Si wafers and stainless steel substrates by plasma-enhanced chemical vapor deposition without any high temperature treatment or additional catalysis. The SnO₂ nanorods grow up from seed nanocrystals along the [110] preferential direction by a self-catalyzed vapor–solid growth mechanism. The surface of the SnO₂ nanorods was modified by ZnO, Pt and Ni nanocrystals. After surface modification, the field emission properties of the SnO₂ nanorod arrays are improved. The Ni nanocrystal with sharp tips and edges act as additional field emission sites to SnO₂ nanorods and thus the Ni/SnO₂/SiO₂/Si outperforms other samples due to the synergistic effects of good conductivity and hierarchical sharp apexes. The field enhancement factor of the Ni/SnO₂/SiO₂/Si increased around 3 times while the turn-on field of 8.0 V μm⁻¹ is about one third of the SnO₂/SiO₂/Si device.

Article information

https://doi.org/10.1039/C1NR10710K

Article type

Paper

Submitted

01 Jul 2011

Accepted

23 Sep 2011

First published

02 Nov 2011

Download Citation

Nanoscale, 2012,4, 1491-1496

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SnO₂ nanorod arrays: low temperature growth, surface modification and field emission properties

H. Huang, C. K. Lim, M. S. Tse, J. Guo and O. K. Tan, Nanoscale, 2012, 4, 1491 DOI: 10.1039/C1NR10710K

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