Issue 58, 2014
From the journal:

RSC Advances

Electrical and optical characterizations of β-Ga2O3:Sn films deposited on MgO (110) substrate by MOCVD

Wei Mi,a   Xuejian Du,a   Caina Luan,a   Hongdi Xiaoa  and  Jin Ma*a  

* Corresponding authors

a School of Physics, Shandong University, Jinan 250100, PR China
E-mail: miwei1986@yeah.net
Fax: +86 531 88564886
Tel: +86 531 88361057

Abstract

Tin-doped β-Ga2O3 (β-Ga2O3:Sn) films doped with different tin concentrations were deposited on MgO (110) substrates by metal organic chemical vapor deposition (MOCVD) at 700 °C. The effect of doping on the structural, electrical and optical properties of the films was investigated. The 10% Sn-doped film exhibited the best electrical conductivity properties with the lowest resistivity about 5.21 × 10−2 Ω cm, which is over ten orders of magnitude lower than the un-doped film. Micro-structural analysis revealed that the film with 10% Sn content had a clear in-plane relationship of β-Ga2O3 (100) ‖ MgO (110) with β-Ga2O3 ([2 with combining macron]01) ‖ MgO (111). The average transmittance of the samples in the visible range exceeded 87% and the optical band gap of the films varied from 4.12 to 4.80 eV.

Graphical abstract: Electrical and optical characterizations of β-Ga2O3:Sn films deposited on MgO (110) substrate by MOCVD

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Article information

DOI
https://doi.org/10.1039/C4RA02479F
Article type
Paper
Submitted
21 Mar 2014
Accepted
02 Jul 2014
First published
02 Jul 2014

RSC Adv., 2014,4, 30579-30583

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Electrical and optical characterizations of β-Ga2O3:Sn films deposited on MgO (110) substrate by MOCVD

W. Mi, X. Du, C. Luan, H. Xiao and J. Ma, RSC Adv., 2014, 4, 30579 DOI: 10.1039/C4RA02479F

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