A sputtered CdS buffer layer for co-electrodeposited Cu2ZnSnS4 solar cells with 6.6% efficiency

Jiahua Tao; Kezhi Zhang; Chuanjun Zhang; Leilei Chen; Huiyi Cao; Junfeng Liu; Jinchun Jiang; Lin Sun; Pingxiong Yang; Junhao Chu

doi:10.1039/C5CC01170A

A sputtered CdS buffer layer for co-electrodeposited Cu₂ZnSnS₄ solar cells with 6.6% efficiency†

Jiahua Tao,^a Kezhi Zhang,^a Chuanjun Zhang,^b Leilei Chen,^a Huiyi Cao,^a Junfeng Liu,^a Jinchun Jiang,^b Lin Sun,*^a Pingxiong Yang^a and Junhao Chu^ab

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* Corresponding authors

^a Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, Shanghai 200241, China
E-mail: lsun@ee.ecnu.edu.cn
Fax: +86 21 54345119

^b National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China

Abstract

Cu₂ZnSnS₄ thin films with thicknesses ranging from 0.35 to 1.85 μm and micron-sized grains (0.5–1.5 μm) were synthesized using co-electrodeposited Cu–Zn–Sn–S precursors with different deposition times. Here we have introduced a sputtered CdS buffer layer for the development of CZTS solar cells for the first time, which enables breakthrough efficiencies up to 6.6%.

Chemical Communications

A sputtered CdS buffer layer for co-electrodeposited Cu₂ZnSnS₄ solar cells with 6.6% efficiency†

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A sputtered CdS buffer layer for co-electrodeposited Cu₂ZnSnS₄ solar cells with 6.6% efficiency

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