Issue 67, 2015
From the journal:

RSC Advances

Hysteresis-free liquid crystal devices based on solution-derived oxide compound films treated by ion beam irradiation

Ju Hwan Lee,a   Hae-Chang Jeong,a   Hong-Gyu Parka  and  Dae-Shik Seo*a  

* Corresponding authors

a Department of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749, Korea
E-mail: dsseo@yonsei.ac.kr
Fax: +82-2-2123-3147
Tel: +82-2-2123-4617

Abstract

Compounds with a high dielectric constant (high-k compounds) offer fast response times and low threshold voltages, but are limited by capacitance hysteresis. In this study, we successfully demonstrated high-performance liquid crystal (LC) devices without capacitance hysteresis, using ion beam (IB)-irradiated Hafnium Tin Oxide (HfSnO) films as an alignment layer and controlling the IB intensity. The HfSnO films were prepared using a simple, cost-effective solution process. Atomic force microscopy and X-ray photoelectron spectroscopy were performed to elucidate the LC alignment mechanism. The LC alignment state, pretilt angle, electro-optical performance, and capacitance hysteresis were evaluated as a function of IB intensity.

Graphical abstract: Hysteresis-free liquid crystal devices based on solution-derived oxide compound films treated by ion beam irradiation

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Article information

DOI
https://doi.org/10.1039/C5RA09337F
Article type
Paper
Submitted
19 May 2015
Accepted
12 Jun 2015
First published
12 Jun 2015

RSC Adv., 2015,5, 54079-54084

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Hysteresis-free liquid crystal devices based on solution-derived oxide compound films treated by ion beam irradiation

J. H. Lee, H. Jeong, H. Park and D. Seo, RSC Adv., 2015, 5, 54079 DOI: 10.1039/C5RA09337F

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