Issue 98, 2015
From the journal:

RSC Advances

The defect nature of photoluminescence from a porous silicon nanowire array†

Qianqian Yu,a   Haiping He,*a   Lu Gana  and  Zhizhen Yea  

* Corresponding authors

a State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, People's Republic of China
E-mail: hphe@zju.edu.cn
Tel: +86-571-87953139

Abstract

We carried out comprehensive steady-state and time-resolved photoluminescence (PL) studies to elucidate the origin of luminescence from a porous Si nanowire array prepared by metal-assisted chemical etching. We provide evidence for the defect nature of the PL, and ascribe it to donor–acceptor pair recombination. A schematic energy-level diagram is proposed to interpret the overall PL features.

Graphical abstract: The defect nature of photoluminescence from a porous silicon nanowire array

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Article information

DOI
https://doi.org/10.1039/C5RA13820E
Article type
Communication
Submitted
14 Jul 2015
Accepted
14 Sep 2015
First published
14 Sep 2015

RSC Adv., 2015,5, 80526-80529

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The defect nature of photoluminescence from a porous silicon nanowire array

Q. Yu, H. He, L. Gan and Z. Ye, RSC Adv., 2015, 5, 80526 DOI: 10.1039/C5RA13820E

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