We report the electrical bistable characteristics of a hybrid polymer/inorganic nanocomposite device consisting of SnO₂ nanoparticles (NPs) embedded in an insulating polymethylmethacrylate (PMMA) layer sandwiched between conductive indium tin oxide (ITO) and aluminium (Al) electrodes. X-ray diffraction measurements were performed for assessment of the crystallographic nature of SnO₂ nanoparticles while the microstructural nature of SnO₂ nanoparticles embedded in the PMMA matrix was confirmed using transmission electron microscopy. Detailed electrical characterizations suggested an influence of the NP concentration on the switching characteristics of the Al/SnO₂-PMMA/ITO memory devices. The highest resistance ratio > 10³ (R_off/R_on) was observed in a device with 2 weight% SnO₂ NPs. The retention tests on the fabricated device demonstrated the consistency in current of the ON/OFF state even after 10⁴ s. The conduction mechanisms of the fabricated nanocomposite based memory cell were discussed on the basis of experimental data using a charge trapping–detrapping mechanism in the NPs. Our findings offer a feasible and low cost chemical approach to fabricate a transparent and high density RS memory device.