Issue 29, 2016

Growth, crystal structure, Hirshfeld surface, dielectric and mechanical properties of a new organic single crystal: ‘Bis glycine’ squarate

Abstract

A novel transparent organic crystal ‘Bis glycine’ squarate has been grown by a slow evaporation method. Single crystal XRD confirms the monoclinic lattice with space group C2/c in BGSQ crystal with a refinement value (R) of 0.06. The molecular electron charge density distribution of the BGSQ compound is described. The growth rate of the BGSQ crystal is estimated by morphological study. The Hirshfeld surface gives information about intermolecular interactions within the crystal structure and the fingerprint plot shows the nature and type of intermolecular close contact experienced by the molecules in a crystal. The FTIR spectrum confirms the various functional groups present in the grown crystal. Thermal stability and melting point (182.20 °C) were studied with TGA-DTA. The low value of the dielectric constant of BGSQ suggests that the crystal can be used in the microelectronics industry. In UV spectra, a lower cutoff value at 280 nm and a wide band gap of 4.25 eV for the BGSQ crystal are observed. Meyer's index number (1.817) in hardness studies confirmed the soft nature of the crystals. Voids have been used to describe the mechanical strength of crystalline materials.

Graphical abstract: Growth, crystal structure, Hirshfeld surface, dielectric and mechanical properties of a new organic single crystal: ‘Bis glycine’ squarate

Supplementary files

Article information

Article type
Paper
Submitted
15 Sep 2015
Accepted
26 Feb 2016
First published
26 Feb 2016

RSC Adv., 2016,6, 24565-24576

Growth, crystal structure, Hirshfeld surface, dielectric and mechanical properties of a new organic single crystal: ‘Bis glycine’ squarate

N. Tyagi, N. Sinha, H. Yadav and B. Kumar, RSC Adv., 2016, 6, 24565 DOI: 10.1039/C5RA18983G

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