Issue 20, 2015

High performance UV light photodetectors based on Sn-nanodot-embedded SnO2 nanobelts

Abstract

We report the controlled growth of novel Sn-nanodot-embedded SnO2 nanobelts via a facile chemical vapor deposition method. Structural analysis confirms that the product consists of a single-crystalline SnO2 nanobelt with amorphous Sn nanodots embedded in it, forming an interesting heterostructure. Then, an individual nanobelt-based photodetector was constructed, which exhibits a high external quantum efficiency and high on/off current ratio. Furthermore, the photodetector shows great advantages in the response time compared with other photodetectors made of oxide semiconductor nanostructures, indicating a very high responsivity. The high performance of the heterostructure can be attributed to the perfect crystallinity and the special Sn-nanodot-embedded structure. The present Sn-nanodot-embedded SnO2 nanobelts are envisaged to be strong candidates for high performance UV photodetectors.

Graphical abstract: High performance UV light photodetectors based on Sn-nanodot-embedded SnO2 nanobelts

Supplementary files

Article information

Article type
Paper
Submitted
14 Feb 2015
Accepted
21 Apr 2015
First published
21 Apr 2015

J. Mater. Chem. C, 2015,3, 5253-5258

High performance UV light photodetectors based on Sn-nanodot-embedded SnO2 nanobelts

Y. Huang, J. Lin, L. Li, L. Xu, W. Wang, J. Zhang, X. Xu, J. Zou and C. Tang, J. Mater. Chem. C, 2015, 3, 5253 DOI: 10.1039/C5TC00453E

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