Issue 30, 2016

High-efficiency deep-red quantum-dot light-emitting diodes with type-II CdSe/CdTe core/shell quantum dots as emissive layers

Abstract

We report a type of highly efficient deep-red light-emitting diode based on type-II CdTe/CdSe core/shell quantum dots (QDs). High-quality CdTe/CdSe core/shell QDs with three different photoluminescence emissions peaked at 642, 664 and 689 nm are, respectively, synthesized through a green process. Correspondingly, three devices employing QDs with different PL peaks show the maximum external quantum efficiency (EQE) of 5.24%, 5.74% and 6.19% with a low turn-on voltage of about 1.8 V, respectively. Interestingly, EQE is kept above 5% in a certain range of luminance (from 101 to 103 cd m−2). To our knowledge, this is the first report that uses type-II core/shell QDs as deep-red emitters and these results may offer a practicable reference for applications that require a high efficiency deep-red illuminant.

Graphical abstract: High-efficiency deep-red quantum-dot light-emitting diodes with type-II CdSe/CdTe core/shell quantum dots as emissive layers

Supplementary files

Article information

Article type
Paper
Submitted
15 Apr 2016
Accepted
07 Jun 2016
First published
08 Jun 2016

J. Mater. Chem. C, 2016,4, 7223-7229

High-efficiency deep-red quantum-dot light-emitting diodes with type-II CdSe/CdTe core/shell quantum dots as emissive layers

Q. Lin, B. Song, H. Wang, F. Zhang, F. Chen, L. Wang, L. S. Li, F. Guo and H. Shen, J. Mater. Chem. C, 2016, 4, 7223 DOI: 10.1039/C6TC01531J

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