Electrical properties of O-self-doped boron-nitride nanotubes and the piezoelectric effects of their freestanding network film†
Abstract
Boron-nitride nanotubes (BNNTs) are a common one-dimensional (1D) nanostructure that possess piezoelectric potential due to ion-covalent boron-nitride (BN) bonding. Harnessing the advantages offered by high-stability BN structures, these materials have been used for various new applications such as nanogenerators, nanotransistors, and nano-artificial eardrums. In this paper, we used nano-iron oxide red as a catalyst and boron powder in an aqueous dispersion as the boron source to synthesize high-purity O-self-doped BNNTs and film. We investigated the electrical properties of O-self-doped BNNTs and the piezoelectricity of freestanding BNNT film and demonstrated that the electrical properties of O-self-doped BNNTs improved dramatically compared to those of non-doped BNNTs. We also analyzed the band gaps and density of states (DOS) of the O-self-doped BNNTs with the Spanish Initiative for Electronic Simulation with Thousands of Atoms (SIESTA) code to explain the improvement. In addition, we revealed the piezoelectric voltage coefficient g31 of O-self-doped BNNTs (0.28 V m N−1) network films, which can guide future applications for vibration nanosensors and transducers under extreme conditions.
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