Issue 9, 2002
From the journal:

Journal of Materials Chemistry

MOCVD of CeF3 films on Si(100) substrates: synthesis, characterization and luminescence spectroscopy

Raffaella Lo Nigro,a   Graziella Malandrino,a   Ignazio L. Fragalà,*a   Marco Bettinelli*b  and  Adolfo Speghinib  

* Corresponding authors

a Dipartimento Scienze Chimiche, Università di Catania, and INSTM, UdR Catania, Viale Andrea Doria, 6, I-95125 Catania, Italy
E-mail: lfragala@dipchi.unict.it

b Dipartimento Scientifico e Tecnologico, Università di Verona, and INSTM, UdR Verona, Ca' Vignal, Strada Le Grazie 15, 37134 Verona, Italy

Abstract

CeF3 thin films have been deposited on Si(100) substrates by metal–organic chemical vapor deposition (MOCVD). The Ce(hfa)3·diglyme [Hhfa = 1,1,1,5,5,5-hexafluoro-2,4-pentanedione, diglyme = (CH3O(CH2CH2O)2CH3)] precursor has been adopted as a single source for both Ce and F components. This adduct has proved to be a good and reliable precursor, suitable for evaporation from the liquid phase due to its rather low melting point (75 °C).

The structural, compositional, morphological and spectroscopic properties of the films have been investigated by X-ray diffraction (XRD), wavelength dispersion X-ray analysis (WDX), scanning electron microscopy (SEM) and luminescence spectroscopy.

Graphical abstract: MOCVD of CeF3 films on Si(100) substrates: synthesis, characterization and luminescence spectroscopy

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Article information

DOI
https://doi.org/10.1039/B201716B
Article type
Paper
Submitted
15 Feb 2002
Accepted
24 Jun 2002
First published
05 Aug 2002

J. Mater. Chem., 2002,12, 2816-2819

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MOCVD of CeF3 films on Si(100) substrates: synthesis, characterization and luminescence spectroscopy

R. Lo Nigro, G. Malandrino, I. L. Fragalà, M. Bettinelli and A. Speghini, J. Mater. Chem., 2002, 12, 2816 DOI: 10.1039/B201716B

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