Issue 9, 2010
From the journal:

Journal of Materials Chemistry

Metalorganic chemical vapor deposition of non-GST chalcogenide materials for phase change memory applications

Jun-Ku Ahn,a   Kyoung-Woo Park,a   Sung-Gi Hur,a   Nak-Jin Seong,a   Chung-Soo Kim,c   Jeong-Yong Leec  and  Soon-Gil Yoon*ab  

* Corresponding authors

a School of Nano Science and Technology, Chungnam National University, Daeduk Science Town, Daejeon, Korea
E-mail: sgyoon@cnu.ac.kr

b Graduate of Analytical Science and Technology (GRAST), Chungnam National University, Daeduk Science Town, Daejeon, Korea

c Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, 335 Gwahangno, Yuseong-gu, Daejeon, Korea
E-mail: j.y.lee@kaist.ac.kr

Abstract

The feasibility of InSbTe (IST) chalcogenide new materials by metalorganic chemical vapor deposition (MOCVD) was demonstrated for PRAM applications. IST-MOCVD at a low temperature of 250 °C resulted in a favorable conformal deposition in the trench structure with a high aspect ratio. The IST films grown at 250 °C showed the highest resistance of approximately 108 Ω/sq, suggesting the amorphous phase of IST and the films grown at 300 °C include various crystalline phases of IST, In–Sb, and In–Te. MOCVD-IST films exhibited a step-coverage of about 95% in the trench structure with a 5 : 1 aspect ratio (a height of 500 nm and a diameter of 100 nm) and also showed reliable filling of the trench under appropriate deposition conditions. Phase switching between amorphous and crystalline states in the IST films grown on a trench structure at a high-aspect ratio (3.5 : 1) was demonstrated showing functional characteristics for applications in memory devices. The IST-based chalcogenide films used included various crystallized phases of In–Sb–Te, In–Sb and In–Te, which proved to be favorable for multilevel data storage.

Graphical abstract: Metalorganic chemical vapor deposition of non-GST chalcogenide materials for phase change memory applications

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Article information

DOI
https://doi.org/10.1039/B922398C
Article type
Paper
Submitted
27 Oct 2009
Accepted
30 Nov 2009
First published
13 Jan 2010

J. Mater. Chem., 2010,20, 1751-1754

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Metalorganic chemical vapor deposition of non-GST chalcogenide materials for phase change memory applications

J. Ahn, K. Park, S. Hur, N. Seong, C. Kim, J. Lee and S. Yoon, J. Mater. Chem., 2010, 20, 1751 DOI: 10.1039/B922398C

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