Issue 29, 2011
From the journal:

Journal of Materials Chemistry

High-performance solution processed oxide TFT with aluminum oxide gate dielectric fabricated by a sol–gel method

Christophe Avisa  and  Jin Jang*a  

* Corresponding authors

a Department of Information display and Advanced Display Research Center, Kyung Hee University, Dongdaemoon-ku, Seoul, Korea
E-mail: jjang@khu.ac.kr

Abstract

We have studied the fabrication of solution processed aluminum-oxide (AlOx) gate dielectric at the maximum process temperature of 300 °C for a solution based zinc-tin-oxide (ZTO) thin-film-transistor (TFT). An AlOx layer was spin-coated from a solution of aluminum chloride (AlCl3) and then annealed at 300 °C for 1 h. The breakdown electrical field and leakage current density of the AlOx were found to be ∼4 MV cm−1 and 63 μA cm−2 at 1 MV cm−1, respectively. The ZTO layer was prepared by spin-coating or inkjet printing as an active layer of the TFT with AlOx gate dielectric and then annealed at 300 °C for 1 h. The TFT made using spin coating exhibited the field-effect mobility of 33 cm2 V−1s−1 in the saturation region, a gate swing of 96 mV dec.−1 and a threshold voltage of ∼1.2 V and the inkjet printed TFT showed a field-effect mobility of 24 cm2 V−1s−1.

Graphical abstract: High-performance solution processed oxide TFT with aluminum oxide gate dielectric fabricated by a sol–gel method

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Article information

DOI
https://doi.org/10.1039/C1JM12227D
Article type
Communication
Submitted
19 May 2011
Accepted
06 Jun 2011
First published
20 Jun 2011

J. Mater. Chem., 2011,21, 10649-10652

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High-performance solution processed oxide TFT with aluminum oxide gate dielectric fabricated by a sol–gel method

C. Avis and J. Jang, J. Mater. Chem., 2011, 21, 10649 DOI: 10.1039/C1JM12227D

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