Issue 23, 2012
From the journal:

CrystEngComm

Investigation of Al-doped silicon nitride-based semiconductor and its shrinkage mechanism

Zhiyong Mao,*a   Yingchun Zhu,*a   Yi Zeng,a   Fangfang Xu,a   Zhen Liu,b   Guohong Ma,b   Zuliang Duc  and  Wentong Gengd  

* Corresponding authors

a The key Laboratory of Inorganic Coating Materials, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, China
E-mail: mzhy1984@163.com, yzhu@mail.sic.ac.cn

b Department of Physics, Shanghai University, Shanghai, China

c Key Laboratory for Special Functional Materials of Ministry of Education, Henan University, Kaifeng, China

d School of Materials Science & Engineering, University of Science & Technology Beijing, Beijing, 100083, China

Abstract

An Al-doped silicon nitride-based semiconductor is successfully synthesized by the chemical vapor deposition (CVD) technique. Optical, electrical and electronic properties are investigated in detail which reveal that Al-doped α-Si3N4 presents a typical semi-conductive character with a band-gap of 2.65 eV and an electrical conductivity of ∼6.11 × 10−2 S cm−1. Al-doping complex (substitutional accompanied with interstitial Al ions in the (102) plane) in α-Si3N4 lattice and its resulting abnormal crystal growth property are discussed. Experimental and theoretical calculation results indicate that this peculiar Al-doping complex in the (102) plane is responsible for the shrinkage of the band-gap for Al-doped α-Si3N4. The presented results demonstrate that this Al-doped α-Si3N4 may open up many applications opportunities in optics, electronics and photoelectronics fields.

Graphical abstract: Investigation of Al-doped silicon nitride-based semiconductor and its shrinkage mechanism

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Article information

DOI
https://doi.org/10.1039/C2CE25758K
Article type
Paper
Submitted
15 May 2012
Accepted
16 Jul 2012
First published
16 Jul 2012

CrystEngComm, 2012,14, 7929-7933

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Investigation of Al-doped silicon nitride-based semiconductor and its shrinkage mechanism

Z. Mao, Y. Zhu, Y. Zeng, F. Xu, Z. Liu, G. Ma, Z. Du and W. Geng, CrystEngComm, 2012, 14, 7929 DOI: 10.1039/C2CE25758K

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