Self-powered and fast-speed photodetectors based on CdS:Ga nanoribbon/Au Schottky diodes

Di Wu; Yang Jiang; Yugang Zhang; Yongqiang Yu; Zhifeng Zhu; Xinzheng Lan; Fangze Li; Chunyan Wu; Li Wang; Linbao Luo

doi:10.1039/C2JM34869A

Self-powered and fast-speed photodetectors based on CdS:Ga nanoribbon/Au Schottky diodes

Di Wu,^a Yang Jiang,*^a Yugang Zhang,^a Yongqiang Yu,^a Zhifeng Zhu,^a Xinzheng Lan,^a Fangze Li,^b Chunyan Wu,^b Li Wang^b and Linbao Luo*^b

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* Corresponding authors

^a School of Materials Science and Engineering, Hefei University of Technology, Hefei, Anhui 230009, P. R. China
E-mail: apjiang@hfut.edu.cn

^b School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei, Anhui 230009, P. R. China
E-mail: luolb@hfut.edu.cn

Abstract

Self-powered photodetectors based on CdS:Ga nanoribbons (NR)/Au Schottky barrier diodes (SBDs) were fabricated. The as-fabricated SBDs exhibit an excellent rectification characteristic with a rectification ratio up to 10⁶ within ±1 V in the dark and a distinctive photovoltaic (PV) behavior under light illumination. Photoconductive analysis reveals that the SBDs were highly sensitive to light illumination with very good stability, reproducibility and fast response speeds at zero bias voltage. The corresponding rise/fall times of 95/290 μs represent the best values obtained for CdS based nano-photodetectors. It is expected that such self-powered high performance SBD photodetectors will have great potential applications in optoelectronic devices in the future.

Journal of Materials Chemistry

Self-powered and fast-speed photodetectors based on CdS:Ga nanoribbon/Au Schottky diodes

Abstract

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Self-powered and fast-speed photodetectors based on CdS:Ga nanoribbon/Au Schottky diodes

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