Issue 7, 2012

N-Ion-implanted TiO2 photoanodes in quantum dot-sensitized solar cells

Abstract

Hierarchical nanostructured titanium dioxide (TiO2) clumps were fabricated using electrostatic spray with subsequent nitrogen-ion doping by an ion-implantation technique for improvement of energy conversion efficiency for quantum dot-sensitized solar cells (QDSCs). CdSe quantum dots were directly assembled on the produced N-ion-implanted TiO2 photoanodes by chemical bath deposition, and their photovoltaic performance was evaluated in a polysulfide electrolyte with a Pt counter electrode. We found that the photovoltaic performance of TiO2 electrodes was improved by nearly 145% upon N-ion implantation. The efficiency improvement seems to be due to (1) the enhancement of electron transport through the TiO2 layer by inter-particle necking of primary TiO2 particles and (2) an increase in the recombination resistance at TiO2/QD/electrolyte interfaces by healing the surface states or managing the oxygen vacancies upon N-ion doping. Therefore, N-ion-doped photoanodes offer a viable pathway to develop more efficient QD or dye-sensitized solar cells.

Graphical abstract: N-Ion-implanted TiO2 photoanodes in quantum dot-sensitized solar cells

Supplementary files

Article information

Article type
Paper
Submitted
09 Dec 2011
Accepted
11 Jan 2012
First published
19 Jan 2012

Nanoscale, 2012,4, 2416-2422

N-Ion-implanted TiO2 photoanodes in quantum dot-sensitized solar cells

P. Sudhagar, K. Asokan, E. Ito and Y. S. Kang, Nanoscale, 2012, 4, 2416 DOI: 10.1039/C2NR11953F

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