Bandgap engineering of CdxZn1−xTe nanowires

Keivan Davami; Judith Pohl; Mehrdad Shaygan; Nazli Kheirabi; Hamid Faryabi; Gianaurelio Cuniberti; Jeong-Soo Lee; M. Meyyappan

doi:10.1039/C2NR33284A

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Bandgap engineering of Cd_xZn_1−xTe nanowires†

Keivan Davami,^a Judith Pohl,‡^b Mehrdad Shaygan,‡^a Nazli Kheirabi,‡^a Hamid Faryabi,^a Gianaurelio Cuniberti,^b Jeong-Soo Lee*^a and M. Meyyappan*^c

Author affiliations

* Corresponding authors

^a Division of IT Convergence Engineering, Pohang University of Science and Technology, Pohang, Republic of Korea
E-mail: ljs6951@postech.ac.kr

^b Technical University of Dresden, Dresden, Germany

^c NASA Ames Research Center, Moffett Field, CA 94035, USA
E-mail: m.meyyappan@nasa.gov

Abstract

Bandgap engineering of single-crystalline alloy Cd_xZn_1−xTe (0 ≤ x ≤ 1) nanowires is achieved successfully through control of growth temperature and a two zone source system in a vapor–liquid–solid process. Extensive characterization using electron microscopy, Raman spectroscopy and photoluminescence shows highly crystalline alloy nanowires with precise tuning of the bandgap. It is well known that bulk Cd_xZn_1−xTe is popular for construction of radiation detectors and availability of a nanowire form of this material would help to improve detection sensitivity and miniaturization. This is a step forward towards the accomplishment of tunable and predetermined bandgap emissions for various applications.

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Article information

DOI: https://doi.org/10.1039/C2NR33284A
Article type: Communication
Submitted: 22 Oct 2012
Accepted: 17 Dec 2012
First published: 18 Dec 2012

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Nanoscale, 2013,5, 932-935

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Bandgap engineering of Cd_xZn_1−xTe nanowires

K. Davami, J. Pohl, M. Shaygan, N. Kheirabi, H. Faryabi, G. Cuniberti, J. Lee and M. Meyyappan, Nanoscale, 2013, 5, 932 DOI: 10.1039/C2NR33284A

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