Issue 9, 2013
From the journal:

Journal of Materials Chemistry C

All-solution-processed, transparent thin-film transistors based on metal oxides and single-walled carbon nanotubes†

Jee Ho Park,‡a   Su Jeong Lee,‡a   Tae Il Lee,a   Jung Han Kim,b   Chul-Hong Kim,b   Gee Sung Chae,b   Moon-Ho Ham,c   Hong Koo Baik*a  and  Jae-Min Myoung*a  

* Corresponding authors

a Department of Materials Science and Engineering, Yonsei University, 134 Shinchon-dong Seodaemun-gu, Seoul 120-749, Korea
E-mail: thinfilm@yonsei.ac.kr, jmmyoung@yonsei.ac.kr

b LG Display LCD Research and Development Center, Wollong-myen, Paju-si, Gyeonggi-do 413-811, Korea

c School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Korea

Abstract

The fabrication of fully transparent thin-film transistor (TFT) arrays composed of metal oxides and SWCNTs was performed on a glass substrate through simple all-solution-processed, vacuum-free routes followed by thermal annealing treatments at 350 °C which is the lowest processing temperature reported to date. We adopted fluorine-doped indium tin oxide (ITO:F), stacked zirconium oxide/aluminium oxide/zirconium oxide (ZAZ), indium zinc oxide (IZO), and single-walled carbon nanotubes (SWCNTs) for gate electrodes, gate insulators, channel layers, and source/drain electrodes, respectively, which enabled the fabrication of TFT with desired-performance at a sufficiently low annealing temperature of 350 °C that is compatible with polymer substrates. The TFT fabricated with a back-gated SWCNT/IZO/ZAZ/ITO:F structure was highly transparent with a transmittance of 76.5% in the visible range and exhibited a mobility of 0.45 cm2 V−1 s−1 and an on/off current ratio of ∼106, which are comparable to those of hydrogenated amorphous silicon TFTs. These results suggest that all-solution-processed TFTs have the potential for lost-cost, fully transparent, flexible device applications.

Graphical abstract: All-solution-processed, transparent thin-film transistors based on metal oxides and single-walled carbon nanotubes

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Article information

DOI
https://doi.org/10.1039/C2TC00405D
Article type
Paper
Submitted
13 Oct 2012
Accepted
27 Dec 2012
First published
03 Jan 2013

J. Mater. Chem. C, 2013,1, 1840-1845

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All-solution-processed, transparent thin-film transistors based on metal oxides and single-walled carbon nanotubes

J. H. Park, S. J. Lee, T. I. Lee, J. H. Kim, C. Kim, G. S. Chae, M. Ham, H. K. Baik and J. Myoung, J. Mater. Chem. C, 2013, 1, 1840 DOI: 10.1039/C2TC00405D

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