Issue 17, 2013
From the journal:

CrystEngComm

Ge in-plane nanowires grown by MBE: influence of surface treatment

Roman Bansen,*a   Jan Schmidtbauer,a   Robert Gurke,ab   Thomas Teubner,a   Robert Heimburgera  and  Torsten Boecka  

* Corresponding authors

a Leibniz Institute for Crystal Growth, Max-Born-Str. 2, 12489 Berlin, Germany
E-mail: roman.bansen@ikz-berlin.de
Fax: +49 30 6392 3003
Tel: +49 30 6392 3120

b Insitut für klinische Pharmakologie, Medizinische Fakultät, Technische Universität Dresden, Fiedlerstr. 27, 01307 Dresden, Germany

Abstract

We present a detailed study of morphological phenomena during molecular beam epitaxy (MBE) of Ge nanowires on Ge substrates by means of the vapor–liquid–solid mechanism. Different wet chemical surface passivation methods were tested for their effect on Ge nanowire growth. Clean, smooth and well-passivated surfaces enable the preferential formation of in-plane nanowires, instead of conventional out-of-plane nanowires. Depending on the type of passivation, different growth directions of the self-aligned in-plane wires were observed: exclusively <110>-grown wires on substrates with a very stable passivation layer, both <110> and <100> growth on substrates with a less stable passivation. The morphology of the wires was studied by means of transmission electron microscopy (TEM), scanning electron microscopy (SEM) and atomic force microscopy (AFM). For the <100>-grown in-plane wires, nanofaceting of the top and side walls was observed. Based on the analysis, a coherent hypothesis is formulated to explain the experimental findings.

Graphical abstract: Ge in-plane nanowires grown by MBE: influence of surface treatment

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Article information

DOI
https://doi.org/10.1039/C3CE27047E
Article type
Paper
Submitted
17 Dec 2012
Accepted
26 Feb 2013
First published
27 Feb 2013

CrystEngComm, 2013,15, 3478-3483

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Ge in-plane nanowires grown by MBE: influence of surface treatment

R. Bansen, J. Schmidtbauer, R. Gurke, T. Teubner, R. Heimburger and T. Boeck, CrystEngComm, 2013, 15, 3478 DOI: 10.1039/C3CE27047E

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