Issue 14, 2013
From the journal:

CrystEngComm

Achieve high-quality GaN films on La0.3Sr1.7AlTaO6 (LSAT) substrates by low-temperature molecular beam epitaxy

Wenliang Wang,a   Hui Yanga  and  Guoqiang Li*ab  

* Corresponding authors

a State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510641, China
E-mail: msgli@scut.edu.cn
Fax: +86 2087112957
Tel: +86 2087112957

b Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, United Kingdom

Abstract

The growth of c-plane GaN films on La0.3Sr1.7AlTaO6 (LSAT) (111) substrates has been carried out by molecular beam epitaxy (MBE) at various substrate temperatures. GaN grown at 750 °C shows poor crystallinity with an up to 8 nm thick interim layer between LSAT and GaN, mainly due to the severe interfacial reaction between the substrate and the film. On the contrary, an atomically abrupt interface has been observed when GaN was grown at a lower temperature of 500 °C. This low-temperature grown GaN exhibits high crystallinity with a very smooth surface and strong band-edge emission, which we attribute to the well-controlled oxygen atom evaporation from LSAT substrate surface thanks to the low temperature growth. On the one hand, it avoids the severe interfacial reaction that takes place in the case of high-temperature epitaxial growth; on the other hand, it conserves the crystalline structure of the substrate surface, and consequently takes good advantage of the small lattice mismatch between GaN and LSAT. Considering the advantages of LSAT over sapphire, and the device-ready film quality of GaN achieved on LSAT, this work exhibits a promising future for high-performance light emitting diodes on this unconventional substrate.

Graphical abstract: Achieve high-quality GaN films on La0.3Sr1.7AlTaO6 (LSAT) substrates by low-temperature molecular beam epitaxy

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Article information

DOI
https://doi.org/10.1039/C3CE27090D
Article type
Paper
Submitted
25 Dec 2012
Accepted
23 Jan 2013
First published
24 Jan 2013

CrystEngComm, 2013,15, 2669-2674

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Achieve high-quality GaN films on La0.3Sr1.7AlTaO6 (LSAT) substrates by low-temperature molecular beam epitaxy

W. Wang, H. Yang and G. Li, CrystEngComm, 2013, 15, 2669 DOI: 10.1039/C3CE27090D

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