Issue 36, 2013
From the journal:

CrystEngComm

Homogeneous epitaxial growth of AlN single-crystalline films on 2 inch-diameter Si (111) substrates by pulsed laser deposition

Hui Yang,a   Wenliang Wang,a   Zuolian Liua  and  Guoqiang Li*ab  

* Corresponding authors

a State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China

b Department of Electronic Materials, School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China
E-mail: msgli@scut.edu.cn

Abstract

Homogeneous and crack-free AlN films have been epitaxially grown on 2 inch Si (111) substrates by pulsed laser deposition (PLD). By optimising the laser rastering and PLD growth conditions, the 2 inch-diameter single-crystalline AlN films exhibit excellent thickness uniformity with a root-mean-square (RMS) inhomogeneity of less than 3.6% and a very smooth surface with a RMS roughness of 1.4 nm. There is a 1.5 nm-thick interfacial layer between the as-grown AlN films and Si substrates, which is confirmed by HRTEM and a GIXR simulation, and the as-grown AlN films are almost fully relaxed with only 0.3% in-plane tensile strain. The achievement of high-quality and crack-free AlN films with a uniform thickness and abrupt interface on 2 inch Si (111) substrates is of great interest for AlN-based devices, particularly acoustic filters, where abrupt heterointerfaces with the substrates and flat surfaces of AlN films are highly desired.

Graphical abstract: Homogeneous epitaxial growth of AlN single-crystalline films on 2 inch-diameter Si (111) substrates by pulsed laser deposition

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Article information

DOI
https://doi.org/10.1039/C3CE40886H
Article type
Communication
Submitted
20 May 2013
Accepted
11 Jul 2013
First published
11 Jul 2013

CrystEngComm, 2013,15, 7171-7176

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Homogeneous epitaxial growth of AlN single-crystalline films on 2 inch-diameter Si (111) substrates by pulsed laser deposition

H. Yang, W. Wang, Z. Liu and G. Li, CrystEngComm, 2013, 15, 7171 DOI: 10.1039/C3CE40886H

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