Engineering electrodeposited ZnO films and their memristive switching performance

Ahmad Sabirin Zoolfakar; Rosmalini Ab Kadir; Rozina Abdul Rani; Sivacarendran Balendhran; Xinjun Liu; Eugene Kats; Suresh K. Bhargava; Madhu Bhaskaran; Sharath Sriram; Serge Zhuiykov; Anthony P. O'Mullane; Kourosh Kalantar-zadeh

doi:10.1039/C3CP44451A

Engineering electrodeposited ZnO films and their memristive switching performance†

Ahmad Sabirin Zoolfakar,*^ab Rosmalini Ab Kadir,^ab Rozina Abdul Rani,^a Sivacarendran Balendhran,^a Xinjun Liu,^c Eugene Kats,^d Suresh K. Bhargava,^e Madhu Bhaskaran,^af Sharath Sriram,^af Serge Zhuiykov,^d Anthony P. O'Mullane^e and Kourosh Kalantar-zadeh*^a

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* Corresponding authors

^a School of Electrical and Computer Engineering, RMIT University, Melbourne, VIC 3001, Australia
E-mail: ahdsabirin@yahoo.com, kourosh.kalantar@rmit.edu.au

^b Faculty of Electrical Engineering, Universiti Teknologi MARA, 40450 Shah Alam, Malaysia

^c School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju, Korea

^d Materials Science and Engineering Division, CSIRO, Highett, VIC, Australia

^e School of Applied Sciences, RMIT University, Melbourne, VIC 3001, Australia

^f Functional Materials and Microsystems Research Group, RMIT University, Melbourne, VIC 3001, Australia

Abstract

We report the influence of zinc oxide (ZnO) seed layers on the performance of ZnO-based memristive devices fabricated using an electrodeposition approach. The memristive element is based on a sandwich structure using Ag and Pt electrodes. The ZnO seed layer is employed to tune the morphology of the electrodeposited ZnO films in order to increase the grain boundary density as well as construct highly ordered arrangements of grain boundaries. Additionally, the seed layer also assists in optimizing the concentration of oxygen vacancies in the films. The fabricated devices exhibit memristive switching behaviour with symmetrical and asymmetrical hysteresis loops in the absence and presence of ZnO seed layers, respectively. A modest concentration of oxygen vacancy in electrodeposited ZnO films as well as an increase in the ordered arrangement of grain boundaries leads to higher switching ratios in Ag/ZnO/Pt devices.

Physical Chemistry Chemical Physics

Engineering electrodeposited ZnO films and their memristive switching performance†

Abstract

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