Issue 30, 2013
From the journal:

Physical Chemistry Chemical Physics

Robust switching characteristics of CdSe/ZnS quantum dot non-volatile memory devices

V. Kannana  and  J. K. Rhee*a  

* Corresponding authors

a Millimeter-wave INnovation Technology Research Center (MINT), Dongguk University, Seoul 100-715, Republic of Korea
E-mail: jkrhee@dongguk.edu
Fax: +82-2-2260-3690
Tel: +82-2-2260-3335

Abstract

In this paper we report Al/CdSe–ZnS core–shell quantum dot/AlOx/CdSe–ZnS core–shell quantum dot/ITO based non-volatile resistive memory devices with an ON/OFF ratio of ∼1000. The facile solution processed device exhibited excellent endurance characteristics for 200 000 switching cycles. Retention tests showed good stability for over 20 000 s and the devices are reproducible. A memory operating mechanism is proposed based on charge trapping–detrapping in core–shell quantum dots with AlOx acting as a barrier leading to Coulomb blockade. I–V characteristics of a three terminal device fabricated with the additional terminal wired-out from the middle AlOx layer supports the proposed charge trapping mechanism.

Graphical abstract: Robust switching characteristics of CdSe/ZnS quantum dot non-volatile memory devices

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Article information

DOI
https://doi.org/10.1039/C3CP50216C
Article type
Paper
Submitted
17 Jan 2013
Accepted
09 May 2013
First published
10 May 2013

Phys. Chem. Chem. Phys., 2013,15, 12762-12766

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Robust switching characteristics of CdSe/ZnS quantum dot non-volatile memory devices

V. Kannan and J. K. Rhee, Phys. Chem. Chem. Phys., 2013, 15, 12762 DOI: 10.1039/C3CP50216C

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