MoS2—an integrated protective and active layer on n+p-Si for solar H2 evolution

Anders B. Laursen; Thomas Pedersen; Paolo Malacrida; Brian Seger; Ole Hansen; Peter C. K. Vesborg; Ib Chorkendorff

doi:10.1039/C3CP52890A

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MoS₂—an integrated protective and active layer on n⁺p-Si for solar H₂ evolution†

Anders B. Laursen,^a Thomas Pedersen,^ab Paolo Malacrida,^a Brian Seger,^a Ole Hansen,^ab Peter C. K. Vesborg^a and Ib Chorkendorff*^a

Author affiliations

* Corresponding authors

^a Center for Individual Nanoparticle Functionality, Department of Physics, Technical University of Denmark, Fysikvej bygn. 312, 2800 Kgs. Lyngby, Denmark
E-mail: ibchork@fysik.dtu.dk
Fax: +45 4593 2399
Tel: +45 4525 3153

^b Department of Micro- and Nanotechnology, Technical University of Denmark, Ørsteds plads bygn. 344, 2800 Kgs. Lyngby, Denmark
Fax: +45 4588 7762
Tel: +45 4525 5700

Abstract

A new MoS₂ protected n⁺p-junction Si photocathode for the renewable H₂ evolution is presented here. MoS₂ acts as both a protective and an electrocatalytic layer, allowing H₂ evolution at 0 V vs. RHE for more than 5 days. Using a MoS_x surface layer decreases the overpotential for H₂ evolution by 200 mV.

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Article information

DOI: https://doi.org/10.1039/C3CP52890A
Article type: Communication
Submitted: 03 Oct 2013
Accepted: 04 Oct 2013
First published: 09 Oct 2013

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Phys. Chem. Chem. Phys., 2013,15, 20000-20004

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MoS₂—an integrated protective and active layer on n⁺p-Si for solar H₂ evolution

A. B. Laursen, T. Pedersen, P. Malacrida, B. Seger, O. Hansen, P. C. K. Vesborg and I. Chorkendorff, Phys. Chem. Chem. Phys., 2013, 15, 20000 DOI: 10.1039/C3CP52890A

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